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Machine translation
1. (WO2010032653) WELL-STRUCTURE ANTI-PUNCH-THROUGH MICROWIRE DEVICE, AND FABRICATION METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/032653    International Application No.:    PCT/JP2009/065622
Publication Date: 25.03.2010 International Filing Date: 02.09.2009
IPC:
H01L 21/336 (2006.01), H01L 21/20 (2006.01), H01L 29/06 (2006.01), H01L 29/78 (2006.01)
Applicants: SHARP KABUSHIKI KAISHA [JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522 (JP) (For All Designated States Except US).
CROWDER, Mark Albert; (For US Only)
Inventors: CROWDER, Mark Albert;
Agent: HARAKENZO WORLD PATENT & TRADEMARK; Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041 (JP)
Priority Data:
12/235,359 22.09.2008 US
Title (EN) WELL-STRUCTURE ANTI-PUNCH-THROUGH MICROWIRE DEVICE, AND FABRICATION METHOD THEREOF
(FR) DISPOSITIF À MICRO-FIL ANTI-CLAQUAGE À STRUCTURE DE PUITS ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)A well-structure anti-punch-through microwire device and associated fabrication method are provided. The method initially forms a microwire with alternating highly and lightly doped cylindrical regions. A channel ring is formed external to the microwire outer shell and surrounding a first dopant well-structure region in the microwire, between source and drain (S/D) regions of the microwire. The S/D regions are doped with a second dopant, opposite to the first dopant. A gate dielectric ring is formed surrounding the channel ring, and a gate electrode ring is formed surrounding the gate dielectric ring.
(FR)L'invention porte sur un dispositif à micro-fil anti-claquage à structure de puits et sur un procédé de fabrication associé. Le procédé forme initialement un micro-fil comportant des régions cylindriques alternativement fortement et faiblement dopées. Un anneau de canal est formé à l'extérieur de l'enveloppe externe du micro-fil et entourant une région à structure de puits de premier dopant dans le micro-fil, entre des régions de source et de drain (S/D) du micro-fil. Les régions S/D sont dopées par un second dopant, opposé au premier dopant. Un anneau diélectrique de grille est formé entourant l'anneau de canal, et un anneau d'électrode de grille est formé entourant l'anneau diélectrique de grille.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)