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1. WO2010032468 - STORAGE ELEMENT AND STORAGE DEVICE

Publication Number WO/2010/032468
Publication Date 25.03.2010
International Application No. PCT/JP2009/004681
International Filing Date 17.09.2009
IPC
H01L 27/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
H01L 45/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 49/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
H01L 27/2409
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2409comprising two-terminal selection components, e.g. diodes
H01L 45/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
H01L 45/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
14Selection of switching materials
145Oxides or nitrides
146Binary metal oxides, e.g. TaOx
H01L 45/147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
14Selection of switching materials
145Oxides or nitrides
147Complex metal oxides, e.g. perovskites, spinels
Applicants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 岡田崇志 OKADA, Takashi (UsOnly)
  • 飯島光輝 IIJIMA, Mitsuteru (UsOnly)
  • 有田浩二 ARITA, Koji (UsOnly)
  • 三河巧 MIKAWA, Takumi (UsOnly)
  • 富永健司 TOMINAGA, Kenji (UsOnly)
Inventors
  • 岡田崇志 OKADA, Takashi
  • 飯島光輝 IIJIMA, Mitsuteru
  • 有田浩二 ARITA, Koji
  • 三河巧 MIKAWA, Takumi
  • 富永健司 TOMINAGA, Kenji
Agents
  • 特許業務法人 有古特許事務所 PATENT CORPORATE BODY ARCO PATENT OFFICE
Priority Data
2008-24047119.09.2008JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) STORAGE ELEMENT AND STORAGE DEVICE
(FR) ÉLÉMENT ET DISPOSITIF DE STOCKAGE
(JA) 記憶素子及び記憶装置
Abstract
(FR) L'invention concerne: des éléments de stockage (3) disposés en matrice dans un dispositif de stockage (21) dont la valeur de stockage varie quand on applique une impulsion électrique de polarité négative ou positive et qu'on maintient la résistance électrique modifiée; et un élément suppresseur de courant (2) supprimant le courant qui s'écoule lors de l'application de l'impulsion électrique à l'élément à résistance variable. L'élément suppresseur de courant comprend: une première couche conductrice contenant du tantale et un nitrure de tantale azoté, une couche de semi-conducteur contenant du silicium et un nitrure de silicium azoté, disposée sur la première couche conductrice, et une deuxième couche conductrice contenant du tantale et un nitrure de tantale azoté et disposée sur la couche de semi-conducteur.
(JA)  記憶装置(21)にマトリクス状に配設された記憶素子(3)の各々が、極性が正又は負の電気パルスの印加によりその電気抵抗値が変化しかつ該変化した後の電気抵抗値を維持する抵抗変化素子(1)と、前記抵抗変化素子に前記電気パルスの印加時に流れる電流を抑制する電流抑制素子(2)と、を備える記憶素子であって、前記電流抑制素子は、タンタルと窒素を含有するタンタル窒化物を含む第1の導電体層と、前記第1の導電体層の上に、シリコンと窒素を含有するシリコン窒化物を含む半導体層と、前記半導体層の上に、タンタルと窒素を含有するタンタル窒化物を含む第2の導電体層から構成されている。
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