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1. (WO2010032431) THIN FILM TRANSISTOR HAVING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/032431    International Application No.:    PCT/JP2009/004592
Publication Date: 25.03.2010 International Filing Date: 15.09.2009
IPC:
H01L 29/786 (2006.01), H01L 21/20 (2006.01), H01L 21/336 (2006.01)
Applicants: IDEMITSU KOSAN CO.,LTD. [JP/JP]; 1-1, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1008321 (JP) (For All Designated States Except US).
INOUE, Kazuyoshi [JP/JP]; (JP) (For US Only).
YANO, Koki [JP/JP]; (JP) (For US Only).
TOMAI, Shigekazu [JP/JP]; (JP) (For US Only).
UTSUNO, Futoshi [JP/JP]; (JP) (For US Only).
KASAMI, Masashi [JP/JP]; (JP) (For US Only).
GOTO, Kenji [JP/JP]; (JP) (For US Only).
KAWASHIMA, Hirokazu [JP/JP]; (JP) (For US Only)
Inventors: INOUE, Kazuyoshi; (JP).
YANO, Koki; (JP).
TOMAI, Shigekazu; (JP).
UTSUNO, Futoshi; (JP).
KASAMI, Masashi; (JP).
GOTO, Kenji; (JP).
KAWASHIMA, Hirokazu; (JP)
Agent: WATANABE, Kihei; (JP)
Priority Data:
2008-238353 17.09.2008 JP
Title (EN) THIN FILM TRANSISTOR HAVING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM
(FR) TRANSISTOR À FILM MINCE COMPRENANT UN FILM SEMI-CONDUCTEUR EN OXYDE D'INDIUM CRISTALLIN
(JA) 結晶質酸化インジウム半導体膜を有する薄膜トランジスタ
Abstract: front page image
(EN)A thin film transistor which has a crystalline indium oxide semiconductor film, wherein the crystalline indium oxide semiconductor film is mainly composed of indium oxide and contains an oxide of a positive trivalent metal.
(FR)L'invention porte sur un transistor à film mince qui comprend un film semi-conducteur en oxyde d'indium cristallin, le film semi-conducteur en oxyde d'indium cristallin étant principalement composé d'oxyde d'indium et contenant un oxyde d'un métal trivalent positif.
(JA) 酸化インジウムを主成分とし、正3価の金属酸化物を含有する結晶質酸化インジウム半導体膜を有する薄膜トランジスタ。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)