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1. (WO2010032202) WAVELENGTH-CONTROLLED SEMICONDUCTOR LASER DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/032202    International Application No.:    PCT/IB2009/054044
Publication Date: 25.03.2010 International Filing Date: 16.09.2009
IPC:
H01S 5/026 (2006.01), H01S 5/06 (2006.01), H01S 5/068 (2006.01), G01P 3/36 (2006.01)
Applicants: PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH [DE/DE]; Lübeckertordamm 5 20099 Hamburg (DE) (DE only).
KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven (NL) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IS, IT, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
MOENCH, Holger, M. [DE/NL]; (NL) (For US Only).
GERLACH, Philipp, G. [DE/DE]; (NL) (For US Only).
CARPAIJ, Mark [NL/DE]; (NL) (For US Only).
VAN DER LEE, Alexander, M. [NL/NL]; (NL) (For US Only)
Inventors: MOENCH, Holger, M.; (NL).
GERLACH, Philipp, G.; (NL).
CARPAIJ, Mark; (NL).
VAN DER LEE, Alexander, M.; (NL)
Agent: BEKKERS, Joost, J., J.; High Tech Campus 44 NL-5600 AE Eindhoven (NL)
Priority Data:
08164490.8 17.09.2008 EP
Title (EN) WAVELENGTH-CONTROLLED SEMICONDUCTOR LASER DEVICE
(FR) DISPOSITIF LASER À SEMICONDUCTEUR COMMANDÉ EN LONGUEUR D’ONDE
Abstract: front page image
(EN)Asemiconductor laser device comprising a laser diode with an integrated photodiode, wherein one of the components of the laser diode with theintegrated photodiode is also used for heating the laser diode.Asimplerdesign of a wavelength-controlled semiconductor laseris thus obtained.
(FR)Dispositif laser à semiconducteur, comprenant une diode laser à photodiode intégrée, un des composants de la diode laser à photodiode intégrée étant également utilisé pour chauffer la diode laser. Le dispositif laser à semiconducteur à commande en longueur d’onde ainsi obtenu présente une structure simplifiée.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)