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1. (WO2010031215) METHOD FOR SUBSTANTIALLY UNIFORM COPPER DEPOSITION ONTO SEMICONDUCTOR WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/031215    International Application No.:    PCT/CN2008/072373
Publication Date: 25.03.2010 International Filing Date: 16.09.2008
IPC:
C25D 5/02 (2006.01), C25D 5/18 (2006.01), C25D 21/12 (2006.01), C25D 17/00 (2006.01), H01L 21/288 (2006.01)
Applicants: ACM RESEARCH (SHANGHAI) INC. [CN/CN]; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park Shanghai 201203 (CN) (For All Designated States Except US).
MA, Yue [US/CN]; (CN) (For US Only).
WANG, Xi [CN/CN]; (CN) (For US Only).
HE, Chuan [CN/CN]; (CN) (For US Only).
WANG, Hui [US/CN]; (CN) (For US Only)
Inventors: MA, Yue; (CN).
WANG, Xi; (CN).
HE, Chuan; (CN).
WANG, Hui; (CN)
Agent: SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC; 435 Guiping Road, Xuhui Shanghai 200233 (CN)
Priority Data:
Title (EN) METHOD FOR SUBSTANTIALLY UNIFORM COPPER DEPOSITION ONTO SEMICONDUCTOR WAFER
(FR) PROCÉDÉ POUR DÉPÔT DE CUIVRE SENSIBLEMENT UNIFORME SUR TRANCHE DE SEMI-CONDUCTEUR
Abstract: front page image
(EN)The methods practiced in an electrochemical deposition apparatus with two or more electrodes, described in earlier inventions, are disclosed. The methods produce uniform copper films with WFNU less than 2.5% on semiconductor wafers bearing a resistive copper seed layer with a thickness ranging from 50 to 9O0A in a copper sulfate based electrolyte whose conductivity is between 0.02 to 0.8S/cm.
(FR)L’invention concerne des procédés pratiqués dans un appareil de dépôt électrochimique avec deux ou plusieurs électrodes, qui ont été décrits dans des inventions antérieures. Les procédés produisent des films de cuivre uniformes avec WFNU inférieur à 2,5 % sur des tranches de semi-conducteur portant une couche de germes de cuivre résistif dont  l’épaisseur est comprise entre 50 et 900 Ǻ dans un électrolyte à base de sulfate de cuivre dont la conductivité est entre 0,02 et 0,8 S/cm.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)