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Machine translation
1. (WO2010030106) III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE (LED)
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/030106    International Application No.:    PCT/KR2009/005091
Publication Date: 18.03.2010 International Filing Date: 10.09.2009
IPC:
H01L 33/06 (2010.01)
Applicants: EPIVALLEY CO.,LTD. [KR/KR]; #321 Gongdan-Dong Gumi-city, Gyungbuk 730-030 (KR) (For All Designated States Except US).
PARK, Eun Hyun [KR/KR]; (KR).
JEON, Soo Kun [KR/KR]; (KR) (For US Only).
LIM, Jae Gu [KR/KR]; (KR) (For US Only)
Inventors: PARK, Eun Hyun; (KR).
JEON, Soo Kun; (KR).
LIM, Jae Gu; (KR)
Agent: AN, Sang Jeong; 7F, Tower A, Advanced Institutes of Convergence Technology Iui-dong, Yeongtong-gu, Suwon-si Gyeonggi-do 443-270 (KR)
Priority Data:
10-2008-0089120 10.09.2008 KR
Title (EN) III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE (LED)
(FR) DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR NITRURE III
(KO) 3족 질화물 반도체 발광소자
Abstract: front page image
(EN)This invention relates to a III-nitride semiconductor light emitting device comprising: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer doped with a p-type dopant; an active layer positioned between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, and having a quantum well layer for producing light by re-coupling electrons and electron holes; and a diffusion barrier positioned between said quantum well layer and said p-type nitride semiconductor layer so as to come in contact said layers, and having a smooth interface with said p-type nitride semiconductor layer in order to prevent diffusion of the p-type dopant to said quantum well layer.
(FR)La présente invention concerne un dispositif électroluminescent à semi-conducteur nitrure III se caractérisant en ce qu'il se compose d'une couche de semi-conducteur nitrure de type n; d'une couche de semi-conducteur nitrure de type p dopée avec des agents de dopage de type p; d'une couche active intercalée entre ladite couche de semi-conducteur nitrure de type n et ladite couche de semi-conducteur nitrure de type p; d'une couche à puits quantique qui produit de la lumière par recouplage des électrons et des trous; et d'une barrière de diffusion qui permet de lisser l'interface avec la couche de semi-conducteur nitrure de type p afin d'empêcher la diffusion d'agent de dopage de type p vers le puits quantique.
(KO)본 개시는 n형 질화물 반도체층; p형 도펀트로 도핑된 p형 질화물 반도체층; n형 질화물 반도체층과 p형 질화물 반도체층 사이에 위치하며, 전자와 정공의 재결합을 통해 빛을 생성하도록 양자 우물층을 구비하는 활성층; 그리고, 양자 우물층과 p형 질화물 반도체층 사이에서 양자에 접촉하도록 위치하며, p형 질화물 반도체층과의 계면이 매끄럽게 되도록 그 표면을 형성하여, p형 도펀트의 양자 우물층으로의 확산을 방지하는 확산 방지막;을 포함하는 것을 특징으로 하는 3족 질화물 반도체 발광소자에 관한 것이다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)