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Pub. No.:    WO/2010/029929    International Application No.:    PCT/JP2009/065699
Publication Date: 18.03.2010 International Filing Date: 09.09.2009
H01J 27/20 (2006.01), H01J 27/02 (2006.01), H01J 37/08 (2006.01), H01J 37/305 (2006.01), H01J 37/317 (2006.01)
Applicants: ULVAC, INC. [JP/JP]; 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543 (JP) (For All Designated States Except US).
KUNIBE Toshiju [JP/JP]; (JP) (For US Only)
Inventors: KUNIBE Toshiju; (JP)
Agent: ISHIJIMA Shigeo; (JP)
Priority Data:
2008-231791 10.09.2008 JP
(JA) イオン照射装置
Abstract: front page image
(EN)Provided is an ion irradiation device (10) wherein an intermediate electrode (24) having a voltage slightly lower than that of an ionizing chamber (31) is arranged between the ionizing chamber (31) and an extraction electrode (25), and the focal position of ion beams is brought closer to a first focusing device (26) by focusing the ion beams in the downstream of the intermediate electrode (24).  Thus, since the ion beams are inputted to the first focusing device (26) before the ion beams greatly diffuse, the ion irradiation device having higher ion beam focusing performance is provided.
(FR)L’invention concerne un dispositif d’irradiation ionique (10), comprenant une électrode intermédiaire (24), possédant une tension légèrement inférieure à celle d’une chambre d’ionisation (31) et placée entre la chambre d’ionisation (31) et une électrode d’extraction (25), la position du foyer de faisceaux ioniques étant rapprochée d’un premier dispositif de focalisation (26) par focalisation des faisceaux ioniques en aval de l’électrode intermédiaire (24). De cette façon, comme les faisceaux ioniques sont appliqués au premier dispositif de focalisation (26) avant toute diffusion notable, le dispositif d’irradiation ionique de l’invention produit une meilleure focalisation des faisceaux ioniques.
(JA) 本発明のイオン照射装置(10)は、イオン化室(31)と引出電極(25)との間にイオン化室(31)よりも僅かに低電圧の中間電極(24)を配置し、中間電極(24)よりも下流側でイオンビームを収束させることにより、イオンビームの焦点位置を第一の収束装置(26)に近づける。これにより、イオンビームが大きく発散する前に第一の収束装置(26)に入射するので、イオンビームの収束度が高いイオン照射装置が実現できるようになった。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)