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1. (WO2010029542) DERIVATIZED FULLERENE-BASED DOPANTS FOR ORGANIC SEMICONDUCTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/029542    International Application No.:    PCT/IL2009/000879
Publication Date: 18.03.2010 International Filing Date: 09.09.2009
IPC:
H01L 51/10 (2006.01), H01L 51/46 (2006.01), H01L 51/54 (2006.01)
Applicants: TECHNION RESEARCH & DEVELOPMENT FOUNDATION LTD. [IL/IL]; Senate House Technion City 32000 Haifa (IL) (For All Designated States Except US).
TESSLER, Nir [IL/IL]; (IL) (For US Only).
SOLOMESHCH, Olga [IL/IL]; (IL) (For US Only)
Inventors: TESSLER, Nir; (IL).
SOLOMESHCH, Olga; (IL)
Agent: G.E. EHRLICH (1995) LTD.; 11 Menachem Begin Street 52521 Ramat Gan (IL)
Priority Data:
61/136,486 09.09.2008 US
Title (EN) DERIVATIZED FULLERENE-BASED DOPANTS FOR ORGANIC SEMICONDUCTORS
(FR) DOPANTS À BASE DE DÉRIVÉS DE FULLERÈNE POUR SEMICONDUCTEURS ORGANIQUES
Abstract: front page image
(EN)Methods for producing p-doped organic semiconductor material with a fullerene derivative having at least one electron-withdrawing substituent covalently attached thereto, and semiconductor compositions prepared thereby are provided. Also provided are electronic devices, such as transistors, solar-cells, illuminating devices, OLEDs and detectors, comprised of these p-doped organic semiconductor materials.
(FR)L'invention concerne des procédés de production de matériau semiconducteur organique dopé P à l’aide d’un dérivé du fullerène, auquel est rattaché par liaison covalente au moins un substituant attracteur d’électrons, ainsi que des compositions de semiconducteurs ainsi préparées. L'invention concerne également des dispositifs électroniques, tels que des transistors, des capteurs solaires, des dispositifs d’éclairage, des OLED et des détecteurs, constitués desdits matériaux semiconducteurs organiques dopés P.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)