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1. WO2010028390 - METHOD AND APPARATUS FOR SUPER RADIANT LASER ACTION IN HALF WAVELENGTH THICK ORGANIC SEMICONDUCTOR MICROCAVITIES

Publication Number WO/2010/028390
Publication Date 11.03.2010
International Application No. PCT/US2009/056267
International Filing Date 08.09.2009
IPC
H01S 3/08 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
08Construction or shape of optical resonators or components thereof
H01S 3/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
06Construction or shape of active medium
CPC
H01S 3/0627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
06Construction or shape of active medium
0627the resonator being monolithic, e.g. microlaser
H01S 3/08009
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
08Construction or shape of optical resonators or components thereof
08004incorporating a dispersive element, e.g. a prism for wavelength selection
08009using a diffraction grating
H01S 3/09403
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
09Processes or apparatus for excitation, e.g. pumping
091using optical pumping
094by coherent light
09403Cross-pumping, e.g. Förster process involving intermediate medium for excitation transfer
H01S 3/1628
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
1628characterised by a semiconducting matrix
H01S 3/168
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
168using an organic dye dispersed in a solid matrix
H01S 5/041
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
041Optical pumping
Applicants
  • MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US]/[US] (AllExceptUS)
  • TISCHLER, Jonathan R. [US]/[US] (UsOnly)
  • YOUNG, Elizabeth R. [US]/[US] (UsOnly)
  • NOCERA, Daniel G. [US]/[US] (UsOnly)
  • BULOVIC, Vladimir [RS]/[US] (UsOnly)
Inventors
  • TISCHLER, Jonathan R.
  • YOUNG, Elizabeth R.
  • NOCERA, Daniel G.
  • BULOVIC, Vladimir
Agents
  • SALEHI, Dianoosh
Priority Data
61/095,29308.09.2008US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS FOR SUPER RADIANT LASER ACTION IN HALF WAVELENGTH THICK ORGANIC SEMICONDUCTOR MICROCAVITIES
(FR) PROCÉDÉ ET APPAREIL PERMETTANT UNE ACTION LASER SUPER-RAYONNANTE DANS DES MICROCAVITÉS SEMI-CONDUCTRICES ORGANIQUES AYANT UNE ÉPAISSEUR D'UNE DEMI-LONGUEUR D'ONDE
Abstract
(EN) The disclosed device is a solid state organic semiconductor VCSEL in which the microcavity is composed of metal and dielectric mirrors and the gain layer is only λ/2n thick. The gain layer comprises a thermally evaporated 156.7 nm thick film of the laser dye DCM doped (2.5 % v/v) into an AIq3 host matrix. The microcavity consists of 2 mirrors, a dielectric Bragg reflector (DBR) sputter-coated onto a quartz substrate as the mirror through which the organic gain layer is optically excited and laser emission is collected and a silver mirror that is thermally evaporated on top of the AIq3)DCM film. The device exhibits laser action from the DCM both when the DCM molecules are excited directly at 535 nm and via Fδrster Resonance Energy Transfer (FRET) from the AIq3 (excited at 404 nm) with laser thresholds of 4.9 μj/cm2 and 14.2 μj/cm2 respectively.
(FR) La présente invention porte sur un dispositif qui est un laser VCSEL à semi-conducteur organique. La microcavité est composée d'un métal et de miroirs diélectriques et la couche de gain a une épaisseur de seulement λ/2n. La couche de gain comprend un film de 156,7 nm d'épaisseur formé par évaporation thermique du colorant laser dopé (2,5 % v/v) au DCM dans une matrice hôte en Alq3. La microcavité se compose de 2 miroirs, d'un réflecteur de Bragg à diélectrique (DBR) revêtu par pulvérisation sur un substrat de quartz en tant que miroir à travers lequel la couche de gain organique est excitée optiquement et l'émission laser est recueillie et d'un miroir en argent qui est formé par évaporation thermique sur la face supérieure du film Alq3:DCM. Le dispositif montre une action laser du DCM à la fois lorsque les molécules de DCM sont excitées directement à 535 nm et par l'intermédiaire d'un transfert d'énergie par résonance de type Förster (FRET) de l'Alq3 (excité à 404 nm) avec des seuils laser de 4,9 μJ/cm2 et de 14,2 μJ/cm2 respectivement.
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