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Pub. No.:    WO/2010/027606    International Application No.:    PCT/US2009/053351
Publication Date: 11.03.2010 International Filing Date: 11.08.2009
H01L 31/0376 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, Fifth Floor Oakland, CA 94607 (US) (For All Designated States Except US).
GROSSMAN, Jeffrey, C. [US/US]; (US) (For US Only).
ZETTL, Alexander, K. [US/US]; (US) (For US Only).
WAGNER, Lucas [US/US]; (US) (For US Only)
Inventors: GROSSMAN, Jeffrey, C.; (US).
ZETTL, Alexander, K.; (US).
WAGNER, Lucas; (US)
Agent: ASTON, David, J.; Peters Verny, LLP, 425 Sherman Avenue, Suite 230, Palo Alto, CA 94306 (US)
Priority Data:
61/091,379 23.08.2008 US
Abstract: front page image
(EN)The present invention provides novel strategies for mitigating the Staebler-Wronski Effect (SWE), that is, the light induced degradation in performance of photoconductivity in amorphous silicon. Materials according to the present invention include alloys or composites of amorphous silicon which affect the elasticity of the materials, amorphous silicon that has been grown on a flexed substrate, compression sandwiched comprising amorphous silicon, and amorphous silicon containing nanoscale features that allow stress to be relieved. The composites are formed with nanoparticles such as nanocrystals and nanotubes. Preferred are boron nitride nanotubes (BNNT) including those that have been surface modified.
(FR)L'invention concerne de nouvelles stratégies visant à atténuer l'effet Staebler-Wronski, à savoir la dégradation induite par la lumière de la photoconductivité du silicium amorphe. Les matériaux selon l'invention comprennent des alliages ou des composites de silicium amorphe qui modifient l'élasticité des matériaux, du silicium amorphe qui a été mis en croissance sur un substrat courbé, du silicium amorphe mis en sandwich par compression et du silicium amorphe contenant des éléments à nanoéchelle permettant d'éliminer les contraintes. Les composites selon l'invention sont constitués de nanoparticules, telles que des nanocristaux et des nanotubes, de préférence des nanotubes de nitrure de bore (BNNT), notamment ceux qui présente des modifications de surface.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)