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1. (WO2010027547) MEMORY DEVICE AND METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/027547    International Application No.:    PCT/US2009/048656
Publication Date: 11.03.2010 International Filing Date: 25.06.2009
IPC:
G11C 7/10 (2006.01), G11C 5/14 (2006.01)
Applicants: FREESCALE SEMICONDUCTOR INC. [US/US]; 6501 William Cannon Drive West Austin, TX 78735 (US) (For All Designated States Except US).
DE LA CRUZ, Louis, A. [US/US]; (US) (For US Only).
REMINGTON, Scott, I. [US/US]; (US) (For US Only)
Inventors: DE LA CRUZ, Louis, A.; (US).
REMINGTON, Scott, I.; (US)
Agent: KING, Robert, L.; 7700 W. Parmer Lane MD: Tx32/PL02 Austin, TX 78729 (US)
Priority Data:
12/199,093 27.08.2008 US
Title (EN) MEMORY DEVICE AND METHOD THEREOF
(FR) DISPOSITIF DE MÉMOIRE ET PROCÉDÉ ASSOCIÉ
Abstract: front page image
(EN)The present application discloses a memory array where each memory bit cell (MC) of the array includes a level shifter (112). In addition, each memory bit cell includes a write port (120) that includes pass gates that can include a p-type field effect transistor (125, 126) and an n-type field effect transistor (121, 123). The control electrodes of the p-type field effect transistor and the n-type field effect transistor are connected together as part of a common node (WLB). In addition, a current electrode of the p-type field effect transistor and a current electrode of the n-type field effect transistor are connected together to form a common node (135, 136).
(FR)L'invention concerne un réseau de mémoire dans lequel chaque cellule de bit de mémoire (MC) du réseau comprend un décaleur de niveau (112). En outre, chaque cellule de bit de mémoire comprend un port d'écriture (120) comportant des grilles de passage pouvant comprendre un transistor à effet de champ de type p (125, 126) et un transistor à effet de champ de type n (121, 123). Les électrodes de commande du transistor à effet de champ de type p et du transistor à effet de champ de type n sont connectées l'une à l'autre et font partie d'un nœud commun (WLB). En outre, une électrode de courant du transistor à effet de champ de type p et une électrode de courant du transistor à effet de champ de type n sont connectées l'une à l'autre de manière à former un nœud commun (135, 136).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)