WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2010025057) METHOD AND DEVICE FOR CONTINUOUSLY MEASURING SILICON ISLAND ELEVATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/025057    International Application No.:    PCT/US2009/054175
Publication Date: 04.03.2010 International Filing Date: 18.08.2009
IPC:
G01B 11/24 (2006.01), C30B 15/20 (2006.01)
Applicants: MEMC ELECTRONIC MATERIALS, INC. [US/US]; 501 Pearl Drive St. Peters, MO 63376 (US) (For All Designated States Except US).
LU, Zheng [CN/US]; (US) (For US Only).
KIMBEL, Steven, L. [US/US]; (US) (For US Only).
FUERHOFF, Robert, H. [US/US]; (US) (For US Only).
HOLZER, Joseph, C. [US/US]; (US) (For US Only)
Inventors: LU, Zheng; (US).
KIMBEL, Steven, L.; (US).
FUERHOFF, Robert, H.; (US).
HOLZER, Joseph, C.; (US)
Agent: CRAWFORD, David, E.; (US)
Priority Data:
12/197,669 25.08.2008 US
Title (EN) METHOD AND DEVICE FOR CONTINUOUSLY MEASURING SILICON ISLAND ELEVATION
(FR) PROCÉDÉ ET DISPOSITIF POUR LA MESURE EN CONTINU DE L’ÉLÉVATION D’UN ÎLOT DE SILICIUM
Abstract: front page image
(EN)A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.
(FR)La présente invention a pour objet un procédé de mesure en continu d’une élévation et d’une forme d’un îlot de silicium polycristallin non fondu pendant un processus de fusion de silicium. Le procédé comprend la projection d’une lumière brillante dirigée sur l’îlot de silicium pour produire un point brillant sur l’îlot de silicium. Le procédé comprend également la détermination électronique d’une élévation et d’une forme de l’îlot de silicium par le suivi du point brillant pendant le processus de fusion.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)