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Machine translation
1. (WO2010024436) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/024436    International Application No.:    PCT/JP2009/065195
Publication Date: 04.03.2010 International Filing Date: 31.08.2009
IPC:
H01L 33/00 (2010.01)
Applicants: KABUSHIKI KAISHA TOSHIBA [JP/JP]; 1-1, Shibaura 1-chome, Minato-ku, Tokyo 1058001 (JP) (For All Designated States Except US).
NAGO, Hajime [JP/JP]; (For US Only).
TACHIBANA, Koichi [JP/JP]; (For US Only).
SAITO, Shinji [JP/JP]; (For US Only).
HARADA, Yoshiyuki [JP/JP]; (For US Only).
NUNOUE, Shinya [JP/JP]; (For US Only)
Inventors: NAGO, Hajime; .
TACHIBANA, Koichi; .
SAITO, Shinji; .
HARADA, Yoshiyuki; .
NUNOUE, Shinya;
Agent: SUZUYE, Takehiko; (JP)
Priority Data:
2008-221471 29.08.2008 JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract: front page image
(EN)A semiconductor device comprising a base layer (20) and a light-emitting layer (30) which is formed on the base layer (20) and has a structure wherein barrier layers composed of InAlGaN and quantum well layers composed of InGaN are alternately laminated.
(FR)La présente invention concerne un dispositif semi-conducteur qui comprend une couche de base (20) et une couche électroluminescente (30) qui est formée sur la couche de base (20) et présente une structure, des couches barrière composées de InAlGaN et des couches de puits quantiques composées d’InGaN étant stratifiées de façon alternée.
(JA) 下地層(20)と、下地層(20)上に形成され、InAlGaNで形成された障壁層とInGaNで形成された量子井戸層とが交互に積層された発光層(30)とを備えた半導体装置を提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)