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1. (WO2010024285) METHOD FOR MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/024285    International Application No.:    PCT/JP2009/064852
Publication Date: 04.03.2010 International Filing Date: 26.08.2009
IPC:
C30B 29/38 (2006.01), B24B 1/00 (2006.01), C30B 33/00 (2006.01), H01L 21/304 (2006.01)
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041 (JP) (For All Designated States Except US).
ARAKAWA, Satoshi [JP/JP]; (JP) (For US Only).
MIYANAGA, Michimasa [JP/JP]; (JP) (For US Only).
SAKURADA, Takashi [JP/JP]; (JP) (For US Only).
YAMAMOTO, Yoshiyuki [JP/JP]; (JP) (For US Only).
NAKAHATA, Hideaki [JP/JP]; (JP) (For US Only)
Inventors: ARAKAWA, Satoshi; (JP).
MIYANAGA, Michimasa; (JP).
SAKURADA, Takashi; (JP).
YAMAMOTO, Yoshiyuki; (JP).
NAKAHATA, Hideaki; (JP)
Agent: FUKAMI, Hisao; Fukami Patent Office, p.c., Nakanoshima Central Tower 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-shi, Osaka 5300005 (JP)
Priority Data:
2008-223809 01.09.2008 JP
Title (EN) METHOD FOR MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE NITRURE, ET SUBSTRAT DE NITRURE
(JA) 窒化物基板の製造方法および窒化物基板
Abstract: front page image
(EN)A method for manufacturing a nitride substrate (10) is provided with the following steps.  First, a nitride crystal is grown.  Then, the nitride substrate (10) including a front surface (11) is cut from the nitride crystal.  In the cutting step, the nitride substrate (10) is cut such that the off-angle formed by the axis orthogonally intersecting with the front surface (11) and the m-axis or the a-axis is greater than zero.  When the nitride crystal is grown in the c-axis direction, in the cutting step, the nitride substrate (10) is cut from the nitride crystal along a plane which passes through the front surface and the rear surface of the nitride crystal, but which does not pass through the line segment formed by connecting the center of the radius of curvature of the front surface and that of the rear surface of the nitride crystal.
(FR)L'invention concerne un procédé de fabrication d'un substrat de nitrure (10) selon les étapes suivantes. Tout d'abord, un cristal de nitrure est étiré. Puis, le substrat de nitrure (10) comprenant une surface avant (11) est découpé dans le cristal de nitrure. A l'étape de découpe, le substrat de nitrure (10) est découpé de sorte qu'un angle d'inclinaison formé par un axe entrecoupant orthogonalement la surface avant (11) et un axe m ou un axe a soit supérieur à 0. Lors de l'étirement du cristal de nitrure dans la direction de l'axe c, à l'étape de découpe, le substrat de nitrure (10) est découpé dans le cristal de nitrure le long d'une surface plate qui dépasse la surface avant et la surface arrière du cristal de nitrure, mais non un segment de ligne formé par raccordement du centre du rayon de courbure de la surface avant et de celui de la surface arrière du cristal de nitrure.
(JA) 窒化物基板(10)の製造方法は、以下の工程を備えている。まず、窒化物結晶を成長させる。そして、窒化物結晶から、表面(11)を含む窒化物基板(10)を切り出す。この切り出す工程では、表面(11)に直交する軸と、m軸またはa軸とのなすオフ角が0よりも大きくなるように窒化物基板(10)を切り出す。また窒化物結晶をc軸方向に成長させる場合には、切り出す工程では、窒化物結晶の表面および裏面を通り、かつ窒化物結晶の表面および裏面の曲率半径の中心を結んだ線分を通らない平面に沿って、窒化物結晶から窒化物基板(10)を切り出す。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)