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1. (WO2010023934) METHOD FOR PRODUCING GRAPHENE/SIC COMPOSITE MATERIAL AND GRAPHENE/SIC COMPOSITE MATERIAL OBTAINED BY SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/023934    International Application No.:    PCT/JP2009/004200
Publication Date: 04.03.2010 International Filing Date: 28.08.2009
IPC:
C01B 31/04 (2006.01)
Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY [JP/JP]; 1, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 4648601 (JP) (For All Designated States Except US).
KUSUNOKI, Michiko [JP/JP]; (JP) (For US Only).
NORIMATSU, Wataru [JP/JP]; (JP) (For US Only)
Inventors: KUSUNOKI, Michiko; (JP).
NORIMATSU, Wataru; (JP)
Agent: NAKASHIMA, Michio; (JP)
Priority Data:
2008-220179 28.08.2008 JP
Title (EN) METHOD FOR PRODUCING GRAPHENE/SIC COMPOSITE MATERIAL AND GRAPHENE/SIC COMPOSITE MATERIAL OBTAINED BY SAME
(FR) PROCÉDÉ DE FABRICATION D'UN MATÉRIAU COMPOSITE DE GRAPHÈNE SUR CARBURE DE SILICIUM (GRAPHÈNE/SIC) ET MATÉRIAU COMPOSITE GRAPHÈNE SUR CARBURE DE SILICIUM(GRAPHÈNE/SIC) OBTENU PAR LEDIT PROCÉDÉ.
(JA) グラフェン/SiC複合材料の製造方法及びそれにより得られるグラフェン/SiC複合材料
Abstract: front page image
(EN)A method which can advantageously produce a graphene/SiC composite material wherein a large-area graphene which is flat on the atomic level is formed as a layer on an SiC single crystal substrate. The graphene/SiC composite material is produced as follows: an oxide coating film which is formed by natural oxidation and covers the surface of the SiC single crystal substrate is removed, thereby exposing the Si surface of the SiC single crystal substrate; then the SiC single crystal substrate, which has an exposed Si surface, is heated in an oxygen atmosphere, thereby forming an SiO2 layer on the surface of the SiC single crystal substrate; and then the SiC single crystal substrate provided with the SiO2 layer is heated in a vacuum, thereby forming one or more layers of graphene on the SiC single crystal substrate.
(FR)L'invention propose un procédé de fabrication qui permet de fabriquer de façon rentable un matériau composite de graphène sur carbure de silicium (graphène/SiC) : à l'échelle atomique, un graphène en un plan et de grande surface est formée par stratification sur un substrat de monocristal de carbure de silicium (SiC). On expose la surface du silicium dudit substrat de monocristal de carbure de silicium (SiC) en retirant la membrane d'oxydation qui enveloppe la surface du substrat de monocristal de carbure de silicium (SiC) formée par oxydation naturelle, puis, en chauffant dans un milieu oxygéné ledit substrat de monocristal de SiC dont la surface de silicium est exposée, on forme une couche de dioxyde de silicium (SiO2) à la surface du substrat de monocristal de carbure de silicium (SiC). En chauffant encore sous vide ledit substrat de monocristal de carbure de silicium (SiC) à la surface duquel s'est formée la couche de dioxyde de silicium (SiO2), on forme le matériau composite de graphène sur carbure de silicium (graphène/SiC) par stratification du graphène en une couche, deux couches ou plus, au dessus du substrat de monocristal de carbure de silicium (SiC).
(JA) 原子レベルにおいて平坦な大面積グラフェンが、SiC単結晶基板上に積層形成されてなるグラフェン/SiC複合材料を有利に製造することが出来る製造方法を提供すること。  自然酸化によって形成された、SiC単結晶基板の表面を覆う酸化皮膜を除去することにより、該SiC単結晶基板のSi面を露出させ、次いで、Si面が露出した前記SiC単結晶基板を酸素雰囲気下において加熱することにより、かかるSiC単結晶基板の表面にSiO2 層を形成せしめ、更に、SiO2 層が形成された前記SiC単結晶基板を、真空下、加熱することにより、SiC単結晶基板上に一層又は二層以上のグラフェンが積層形成されてなるグラフェン/SiC複合材料を製造した。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)