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1. WO2010023889 - FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND SPUTTERING TARGET

Publication Number WO/2010/023889
Publication Date 04.03.2010
International Application No. PCT/JP2009/004113
International Filing Date 26.08.2009
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
C22C 30/04
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
30Alloys containing less than 50% by weight of each constituent
04containing tin or lead
C22C 30/06
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
30Alloys containing less than 50% by weight of each constituent
06containing zinc
C23C 14/165
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
16on metallic substrates or on substrates of boron or silicon
165by cathodic sputtering
C23C 14/3407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
C23F 1/20
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
14Aqueous compositions
16Acidic compositions
20for etching aluminium or alloys thereof
H01L 21/02554
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
02554Oxides
Applicants
  • 出光興産株式会社 IDEMITSU KOSAN CO.,LTD. [JP]/[JP] (AllExceptUS)
  • 矢野公規 YANO, Koki [JP]/[JP] (UsOnly)
  • 川嶋浩和 KAWASHIMA, Hirokazu [JP]/[JP] (UsOnly)
  • 井上一吉 INOUE, Kazuyoshi [JP]/[JP] (UsOnly)
Inventors
  • 矢野公規 YANO, Koki
  • 川嶋浩和 KAWASHIMA, Hirokazu
  • 井上一吉 INOUE, Kazuyoshi
Agents
  • 渡辺喜平 WATANABE, Kihei
Priority Data
2008-21805427.08.2008JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND SPUTTERING TARGET
(FR) TRANSISTOR À EFFET DE CHAMP, SON PROCÉDÉ DE FABRICATION ET CIBLE DE PULVÉRISATION CATHODIQUE
(JA) 電界効果型トランジスタ、その製造方法及びスパッタリングターゲット
Abstract
(EN) Provided is a field effect transistor wherein at least a gate electrode, a gate insulating film, a semiconductor layer, a protection layer for the semiconductor layer, a source electrode, and a drain electrode are disposed on a substrate.  The source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is provided between the gate electrode and the semiconductor layer, and the protection layer is provided at least on one surface of the semiconductor layer.  The semiconductor layer is composed of an oxide containing In atoms, Sn atoms, and Zn atoms, and the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atm% or more but not more than 75 atm%, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atm%.
(FR) La présente invention concerne un transistor à effet de champ. Au moins une électrode de grille, un film d’isolation de grille, une couche semi-conductrice, une couche de protection pour la couche semi-conductrice, une électrode de source et une électrode de drain sont disposés sur un substrat. L’électrode de source et l’électrode de drain sont connectées, la couche semi-conductrice se situant entre elles. Le film d’isolation de grille est formé entre l’électrode de grille et la couche semi-conductrice, et la couche de protection est formée sur au moins une surface de la couche semi-conductrice. La couche semi-conductrice est composée d’un oxyde contenant des atomes d’In, des atomes de Sn et des atomes de Zn, et le rapport de composition atomique de Zn/(In + Sn + Zn) est supérieur à 25 % atm, mais inférieur à 75 % atm, et celui de Sn/(In + Sn + Zn) est inférieur à 50 % atm.
(JA)  基板上に、少なくともゲート電極と、ゲート絶縁膜と、半導体層と、半導体層の保護層と、ソース電極と、ドレイン電極とを有し、ソース電極とドレイン電極が、半導体層を介して接続してあり、ゲート電極と半導体層の間にゲート絶縁膜があり、半導体層の少なくとも一面側に保護層を有し、半導体層が、In原子、Sn原子及びZn原子を含む酸化物であり、かつ、Zn/(In+Sn+Zn)で表される原子組成比率が25原子%以上75原子%以下であり、Sn/(In+Sn+Zn)で表される原子組成比率が50原子%未満であることを特徴とする電界効果型トランジスタ。
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