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1. WO2010022530 - METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE OXIDE (TCO) FILMS; PROPERTIES AND APPLICATIONS OF SUCH FILMS

Publication Number WO/2010/022530
Publication Date 04.03.2010
International Application No. PCT/CH2009/000291
International Filing Date 28.08.2009
IPC
C23C 16/40 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
C23C 16/44 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
H01L 31/0224 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0392 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/365 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
365using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C 16/44
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
H01L 21/02422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02422Non-crystalline insulating materials, e.g. glass, polymers
H01L 21/02554
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
02554Oxides
H01L 21/02573
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
H01L 21/0262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
0262Reduction or decomposition of gaseous compounds, e.g. CVD
Applicants
  • OERLIKON SOLAR IP AG, TRÜBBACH [CH]/[CH] (AllExceptUS)
  • DIMITRY, Zimin [RU]/[CH] (UsOnly)
  • ZINDEL, Arno [CH]/[CH] (UsOnly)
  • TEREN, Andrew [US]/[CH] (UsOnly)
  • WATKINS, Owan Charles [US]/[CH] (UsOnly)
  • DESPONT, Laurent [CH]/[CH] (UsOnly)
  • WIDER, Joachim [CH]/[CH] (UsOnly)
  • RAMOINO, Luca [IT]/[CH] (UsOnly)
  • GOSSLA, Mario [DE]/[CH] (UsOnly)
  • VOGLER, Benjamin [CH]/[CH] (UsOnly)
  • KERSCHBAUMER, Joerg [AT]/[AT] (UsOnly)
  • SCHNEIDER, Stefan [DE]/[CH] (UsOnly)
  • MARK, Andreas [CH]/[CH] (UsOnly)
  • POPPELLER, Markus [AT]/[AT] (UsOnly)
  • KUHN, Hansjoerg [CH]/[CH] (UsOnly)
  • BORRELLO, Daniel [CH]/[CH] (UsOnly)
  • BENAGLI, Stefano [CH]/[CH] (UsOnly)
  • MEIER, Johannes [CH]/[CH] (UsOnly)
  • KROLL, Ulrich [DE]/[CH] (UsOnly)
  • VALLAT-SAUVAIN, Evelyne [CH]/[CH] (UsOnly)
Inventors
  • DIMITRY, Zimin
  • ZINDEL, Arno
  • TEREN, Andrew
  • WATKINS, Owan Charles
  • DESPONT, Laurent
  • WIDER, Joachim
  • RAMOINO, Luca
  • GOSSLA, Mario
  • VOGLER, Benjamin
  • KERSCHBAUMER, Joerg
  • SCHNEIDER, Stefan
  • MARK, Andreas
  • POPPELLER, Markus
  • KUHN, Hansjoerg
  • BORRELLO, Daniel
  • BENAGLI, Stefano
  • MEIER, Johannes
  • KROLL, Ulrich
  • VALLAT-SAUVAIN, Evelyne
Common Representative
  • OERLIKON SOLAR IP AG, TRÜBBACH [CH]/[CH]
Priority Data
61/093,42001.09.2008US
61/093,42301.09.2008US
61/093,42401.09.2008US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE OXIDE (TCO) FILMS; PROPERTIES AND APPLICATIONS OF SUCH FILMS
(FR) PROCÉDÉ DE FABRICATION DE PELLICULES D’OXYDE CONDUCTEUR TRANSPARENT (TCO); PROPRIÉTÉS ET APPLICATION DE TELLES PELLICULES
Abstract
(EN) A method for manufacturing a boron doped, transparent, conductive zinc oxide layer from on a substrate is disclosed. The layer is being deposited from at least diethylzinc, water and diborane by low pressure chemical vapour deposition (LPCVD) in a process chamber of a deposition system comprising wherein the gas flow ratio of diethylzinc and water is kept between 0.87 and 1.3 and the gas flow ratio of diborane and diethylzinc is being kept between 0.05 and 0.4. The haze of such manufactured layer, measured as ratio of diffuse transmittance to total transmittance at 600nm, is between 10 and 25%.
(FR) L’invention concerne un procédé de fabrication d’une couche d’oxyde de zinc dopée au bore, transparente, conductrice à partir d’un substrat. La couche est déposée à partir d’au moins du diéthylzinc, de l’eau et du diborane par dépôt chimique en phase vapeur à basse pression dans une chambre de traitement d’un système de dépôt dans laquelle le débit gazeux de diéthylzinc et d’eau est maintenu entre 0,87 et 1,3 et le débit gazeux de diborane et de diéthylzinc est maintenu entre 0,05 et 0,4. Le voile d’une couche ainsi fabriquée, mesuré en tant que rapport entre le facteur de transmission diffuse et le facteur de transmission total à 600 nm, est compris entre 10 et 25 %.
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