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1. (WO2010022097) METHODS FOR INCREASING CARBON NANO-TUBE (CNT) YIELD IN MEMORY DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/022097 International Application No.: PCT/US2009/054219
Publication Date: 25.02.2010 International Filing Date: 18.08.2009
IPC:
H01L 45/00 (2006.01) ,C01B 31/02 (2006.01) ,D01F 11/12 (2006.01) ,H01L 51/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31
Carbon; Compounds thereof
02
Preparation of carbon; Purification
D TEXTILES; PAPER
01
NATURAL OR ARTIFICIAL THREADS OR FIBRES; SPINNING
F
CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES, OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
11
Chemical after-treatment of artificial filaments or the like during manufacture
10
of carbon
12
with inorganic substances
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
Applicants:
SCHRICKER, April, D. [US/US]; US (UsOnly)
SANDISK 3D, LLC [US/US]; 601 McCarthy Blvd. CA 95035, US (AllExceptUS)
Inventors:
SCHRICKER, April, D.; US
Agent:
DUGAN, Brian, M.; Dugan & Dugan, PC 245 Saw Mill River Road Suite 309 Hawthorne, NY 10532, US
Priority Data:
61/090,22219.08.2008US
Title (EN) METHODS FOR INCREASING CARBON NANO-TUBE (CNT) YIELD IN MEMORY DEVICES
(FR) PROCÉDÉS POUR AUGMENTER LE RENDEMENT DE NANOTUBES DE CARBONE (CNT) DANS DES DISPOSITIFS DE MÉMOIRE
Abstract:
(EN) In some aspects, a method of forming a carbon nano-tube (CNT) memory cell is provided that includes (1) forming a first conductor; (2) forming a steering element above the first conductor; (3) forming a first conducting layer above the first conductor; (4) forming a CNT material above the first conducting layer; (5) implanting a selected implant species into the CNT material; (6) forming a second conducting layer above the CNT material; (7) etching the first conducting layer, CNT material and second conducting layer to form a metal-insulator-metal (MIM) stack; and (8) forming a second conductor above the CNT material and the steering element. Numerous other aspects are provided.
(FR) L'invention concerne, sous certains aspects, un procédé de formation d'une cellule de mémoire de nanotube de carbone (CNT) qui comprend (1) la formation d'un premier conducteur; (2) d'un élément d'orientation au-dessus du premier conducteur; (3) d'une première couche conductrice au-dessus du premier conducteur, (4) d'un matériau de CNT au-dessus de la première couche conductrice; (5) l'implantation d'espèces d'implant sélectionnées dans le matériau de CNT; (6) la formation d'une seconde couche conductrice au-dessus du matériau de CNT; (7) la gravure de la première couche conductrice, du matériau de CNT et de la seconde couche conductrice pour former une pile métal-isolant-métal (MIM), et (8) la formation d'un second conducteur au-dessus du matériau de CNT et de l'élément d'orientation. De nombreux autres aspects sont décrits.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)