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1. WO2010004620 - DEVICE AND METHOD FOR REMOVING NITRIDE FILM

Publication Number WO/2010/004620
Publication Date 14.01.2010
International Application No. PCT/JP2008/062341
International Filing Date 08.07.2008
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/318 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
318composed of nitrides
CPC
H01L 21/02087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02082product to be cleaned
02087Cleaning of wafer edges
H01L 21/0209
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02082product to be cleaned
0209Cleaning of wafer backside
H01L 21/31116
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31105Etching inorganic layers
31111by chemical means
31116by dry-etching
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • ソン イル・ソク SONG, Il Seok [KR]/[KR] (UsOnly)
  • ユン ジョン・ファン YOON, Jong Hwan [KR]/[KR] (UsOnly)
  • グォン テチュン KWON, Tae Chun [KR]/[KR] (UsOnly)
  • キム ハクチャン KIM, Hak Chan [KR]/[KR] (UsOnly)
Inventors
  • ソン イル・ソク SONG, Il Seok
  • ユン ジョン・ファン YOON, Jong Hwan
  • グォン テチュン KWON, Tae Chun
  • キム ハクチャン KIM, Hak Chan
Agents
  • 金本 哲男 KANEMOTO, Tetsuo
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DEVICE AND METHOD FOR REMOVING NITRIDE FILM
(FR) DISPOSITIF ET PROCÉDÉ PERMETTANT D’ÉLIMINER UN FILM DE NITRURE
(JA) 窒化膜除去装置及び窒化膜除去方法
Abstract
(EN)
A nitride film removing device is characterized in that the device comprises a chamber in which a substrate having nitride films vapor-deposited on its front and rear surfaces can be treated, a ring-like substrate holder which is installed on the inner surface of the chamber and holds the entire peripheral end part of the lower surface of the substrate while firmly sticking thereto, a gas inlet which is formed in the chamber at a position lower than that of the holder and supplies a processing gas to the nitride film on the rear surface of the substrate, and a gas outlet which is formed in the chamber at a position lower than that of the holder and discharges the processing gas and impurities to the outside.
(FR)
Le dispositif permettant d’éliminer un film de nitrure selon la présente invention est caractérisé en ce que le dispositif comprend une chambre dans laquelle un substrat, doté de films de nitrure soumis à un dépôt en phase vapeur sur ses surfaces avant et arrière, peut être traité, un support de substrat de type anneau qui est installé sur la surface intérieure de la chambre et qui maintient la totalité de la partie d’extrémité périphérique de la surface inférieure du substrat tout en y étant fermement collé, un orifice d’admission de gaz qui est formé dans la chambre à un emplacement situé en dessous de celui du support et qui fournit un gaz de traitement au film de nitrure sur la surface arrière du substrat, et un orifice de sortie de gaz qui est formé dans la chambre à un emplacement situé en dessous de celui du support et qui évacue le gaz de traitement et les impuretés vers l’extérieur.
(JA)
 本発明の窒化膜除去装置は、表面及び裏面にそれぞれ窒化膜が蒸着された基板を内部で処理することができるチャンバーと、前記チャンバーの内側面に設けられ、前記基板下面の端部を全周に渡って密着して保持するリング状の基板ホルダーと、前記チャンバーにおける前記ホルダーよりも下方に設けられ、前記基板裏面の窒化膜に処理ガスを供給するガス流入口と、前記チャンバーにおける前記ホルダーよりも下方に設けられ、前記処理ガス及び不純物を外部に排出するガス流出口と、を含むことを特徴としている。
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