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1. (WO2009143378) GENERATION OF PHOTOMASKS BY DIP-PEN NANOLITHOGRAPHY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/143378    International Application No.:    PCT/US2009/044903
Publication Date: 26.11.2009 International Filing Date: 21.05.2009
IPC:
G03F 7/00 (2006.01)
Applicants: NORTHWESTERN UNIVERSITY [--/US]; 633 Clark Street Evanston, IL 60208 (US) (For All Designated States Except US).
MIRKIN, Chad, A. [US/US]; (US) (For US Only).
JANG, Jae-Won [KR/US]; (US) (For US Only).
SANEDRIN, Raymond, G. [US/US]; (US) (For US Only).
SENESI, Andrew, J. [US/US]; (US) (For US Only).
ZHENG, Zijian [CN/US]; (US) (For US Only)
Inventors: MIRKIN, Chad, A.; (US).
JANG, Jae-Won; (US).
SANEDRIN, Raymond, G.; (US).
SENESI, Andrew, J.; (US).
ZHENG, Zijian; (US)
Agent: MUCZYNSKI, Michael; (US)
Priority Data:
61/055,055 21.05.2008 US
Title (EN) GENERATION OF PHOTOMASKS BY DIP-PEN NANOLITHOGRAPHY
(FR) GÉNÉRATION DE PHOTOMASQUES PAR DPN (NANOLITHOGRAPHIE STYLO À PLUME)
Abstract: front page image
(EN)A method of forming a photomask using a microtip is disclosed herein. The method can include depositing a sacrificial pattern on a substrate using a microtip, forming a mask layer over the sacrificial pattern, and removing the sacrificial pattern and a portion of the mask layer disposed on the sacrificial pattern to form a photomask.
(FR)L'invention concerne un procédé de formation d'un photomasque au moyen d'une micropointe. Le procédé peut comprendre le dépôt d'un motif sacrificiel sur un substrat au moyen d'une micropointe, la formation d'une couche de masque sur le motif sacrificiel, et le retrait du motif sacrificiel et d'une partie de la couche de masque disposée sur le motif sacrificiel pour former un photomasque.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)