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1. (WO2009142787) PHOTOVOLTAIC DEVICES BASED ON NANOSTRUCTURED POLYMER FILMS MOLDED FROM POROUS TEMPLATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/142787    International Application No.:    PCT/US2009/034433
Publication Date: 26.11.2009 International Filing Date: 18.02.2009
IPC:
H01L 31/042 (2006.01)
Applicants: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM [US/US]; 201 West 7th Street Austin, TX 78701 (US) (For All Designated States Except US).
HU, Wenchuang [CN/US]; (US) (For US Only).
ARYAL, Mukti, N. [NP/US]; (US) (For US Only).
BUYUKSERIN, Fatih [TR/US]; (US) (For US Only).
GAO, Jinming [US/US]; (US) (For US Only).
ZHAO, Xiao-mei [US/US]; (US) (For US Only)
Inventors: HU, Wenchuang; (US).
ARYAL, Mukti, N.; (US).
BUYUKSERIN, Fatih; (US).
GAO, Jinming; (US).
ZHAO, Xiao-mei; (US)
Agent: CHALKER, Daniel, J.; (US)
Priority Data:
61/029,508 18.02.2008 US
Title (EN) PHOTOVOLTAIC DEVICES BASED ON NANOSTRUCTURED POLYMER FILMS MOLDED FROM POROUS TEMPLATE
(FR) DISPOSITIFS PHOTOVOLTAÏQUES UTILISANT DES FILMS POLYMÈRES NANOSTRUCTURÉS MOULÉS À PARTIR DE GABARITS POREUX
Abstract: front page image
(EN)The present invention includes a template, an optoelectronic device and methods for making the same. The optoelectronic device includes a first substrate; a first electrode disposed on the first substrate; a first interdigitating, nano-structured charge-transfer molded material (e.g., a polymer) with a first electron affinity disposed on the first electrode; a second interdigitating, nano-structured charge-transfer material (e.g., single molecules, quantum dots, or particles) with a second electron affinity disposed on the first interdigitating, nano-structured charge-transfer material; a second electrode disposed in the second interdigitating, nano-structured charge-transfer material; and a second substrate disposed on the second electrode.
(FR)La présente invention concerne un gabarit, un dispositif optoélectronique et leurs procédés de fabrication. Le dispositif optoélectronique comprend un premier substrat et une première électrode disposée sur le premier substrat. Le dispositif comprend de plus un premier matériau moulé interdigité, nanostructuré, à transfert de charge (par exemple, un polymère) avec une première affinité électronique sur la première électrode, ainsi qu’un second matériau moulé interdigité, nanostructuré, à transfert de charge (par exemple, des molécules, des points quantiques ou des particules uniques) avec une seconde affinité électronique sur le premier matériau moulé interdigité, nanostructuré, à transfert de charge. Le dispositif comprend enfin une seconde électrode disposée dans le second matériau moulé interdigité, nanostructuré, à transfert de charge, et un second substrat disposé sur la seconde électrode.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)