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Machine translation
1. (WO2009142165) SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/142165    International Application No.:    PCT/JP2009/059113
Publication Date: 26.11.2009 International Filing Date: 18.05.2009
IPC:
H01L 27/10 (2006.01), H01L 21/28 (2006.01), H01L 21/768 (2006.01), H01L 23/522 (2006.01), H01L 29/78 (2006.01), H01L 45/00 (2006.01), H01L 49/00 (2006.01)
Applicants: NEC CORPORATION [JP/JP]; 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001 (JP) (For All Designated States Except US).
SUNAMURA, Hiroshi [JP/JP]; (JP) (For US Only).
ITO, Kimihiko [JP/JP]; (JP) (For US Only)
Inventors: SUNAMURA, Hiroshi; (JP).
ITO, Kimihiko; (JP)
Agent: MIYAZAKI, Teruo; (JP)
Priority Data:
2008-131666 20.05.2008 JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(JA) 半導体装置およびその製造方法
Abstract: front page image
(EN)Disclosed is a semiconductor device including a field effect transistor comprising a diffusion layer and a resistance change element comprising a variable resistor layer. The semiconductor device comprises the variable resistor layer provided on the diffusion layer, a via provided on the variable resistor layer, and a wiring layer connected to the via.
(FR)La présente invention concerne un dispositif à semi-conducteur qui comprend un transistor à effet de champ qui comprend une couche de diffusion et un élément de changement de résistance qui comprend une couche de résistance variable. Le dispositif à semi-conducteur comprend la couche de résistance variable prévue sur la couche de diffusion, un trou d’interconnexion prévu sur la couche de résistance variable, et une couche de câblage connectée au trou d’interconnexion.
(JA) 拡散層を有する電界効果トランジスタと可変抵抗体層を有する抵抗変化素子を含む半導体装置であって、前記拡散層上に設けられた前記可変抵抗体層と、前記可変抵抗体層上に設けられたビアと、前記ビアに接続された配線層を有する、半導体装置。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)