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Machine translation
1. (WO2009141952) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/141952    International Application No.:    PCT/JP2009/001366
Publication Date: 26.11.2009 International Filing Date: 26.03.2009
IPC:
H01L 21/3205 (2006.01), H01L 23/12 (2006.01), H01L 23/52 (2006.01), H01L 27/148 (2006.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
KOKUSENYA, Noboru; (For US Only).
KURIYAMA, Toshihiro; (For US Only)
Inventors: KOKUSENYA, Noboru; .
KURIYAMA, Toshihiro;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg., 5-7, Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka, 5410053 (JP)
Priority Data:
2008-131246 19.05.2008 JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract: front page image
(EN)Disclosed is a semiconductor device comprising a through electrode which is so formed as to penetrate a semiconductor substrate, a conductor pad formed on the through electrode and composed of a conductor electrically connected with the through electrode, and a wiring layer formed on the surface of the semiconductor substrate and electrically connected with the conductor pad.
(FR)L'invention porte sur un dispositif à semi-conducteur comprenant une électrode traversante qui est formée de façon à pénétrer dans un substrat semi-conducteur, un plot conducteur formé sur l'électrode traversante et composé d'un conducteur électriquement connecté à l'électrode traversante, et une couche de câblage formée sur la surface du substrat semi-conducteur et électriquement connectée au plot conducteur.
(JA) 半導体装置は、半導体基板を貫通して形成された貫通電極と、貫通電極の上に形成され、貫通電極と電気的に接続する導電体からなる導電体パッドと、半導体基板の表面に形成され、導電体パッドと電気的に接続する配線層とを備える。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)