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Pub. No.:    WO/2009/141932    International Application No.:    PCT/JP2009/000212
Publication Date: 26.11.2009 International Filing Date: 21.01.2009
H01L 21/027 (2006.01), G03F 7/11 (2006.01), G03F 7/20 (2006.01), G03F 7/38 (2006.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
ENDOU, Masayuki; (For US Only).
SASAGO, Masaru; (For US Only)
Inventors: ENDOU, Masayuki; .
SASAGO, Masaru;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg., 5-7, Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka, 5410053 (JP)
Priority Data:
2008-132173 20.05.2008 JP
(JA) パターン形成方法
Abstract: front page image
(EN)A resist film (102) is formed on a substrate (101). Subsequently, pattern exposure is performed by selectively irradiating the resist film (102) with exposure light, with a liquid (104), which contains both nano particles (HfO2) composed of an inorganic oxide and an alicyclic compound (1,3-adamantane diol) that has an alkali soluble group, being distributed on the formed resist film (102). Subsequently, developing of the resist film (102) that has undergone pattern exposure is performed to form a resist pattern (102a) from the resist film (102).
(FR)Un film de résine photosensible (102) est formé sur un substrat (101). Ultérieurement, une exposition de motif est mise en oeuvre par irradiation sélective du film de résine photosensible (102) à l'aide d'une lumière d'exposition, un liquide (104), qui contient des nanoparticules (HfO2) composées d'un oxyde inorganique et d'un composé alicyclique (1,3-adamantane diol) qui présente un groupe soluble dans les alcalis, étant distribué sur le film de résine photosensible (102) formé. Ensuite, un développement du film de résine photosensible (102) qui a subi une exposition de motif est mis en oeuvre pour former un motif de résine photosensible (102a) à partir du film de résine (102).
(JA) 基板(101)の上にレジスト膜(102)を形成し、続いて、形成したレジスト膜(102)の上に、無機酸化物からなるナノ粒子(HfO)とアルカリ可溶性基を有する脂環式化合物(1,3-アダマンタンジオール)とを含む液体(104)を配した状態で、レジスト膜(102)に露光光を選択的に照射することによりパターン露光を行う。続いて、パターン露光が行われたレジスト膜(102)に対して現像を行って、レジスト膜(102)からレジストパターン(102a)を形成する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)