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Machine translation
1. (WO2009141757) A TRANSISTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/141757    International Application No.:    PCT/IB2009/051947
Publication Date: 26.11.2009 International Filing Date: 12.05.2009
IPC:
H01L 27/06 (2006.01), H01L 21/8249 (2006.01), H01L 29/737 (2006.01), H01L 21/331 (2006.01)
Applicants: NXP B.V. [NL/NL]; High Tech Campus 60 NL-5656 AG Eindhoven (NL) (For All Designated States Except US).
DONKERS, Johannes [NL/NL]; (AT) (For US Only).
KRAMER, Mark [NL/BE]; (AT) (For US Only).
MEUNIER-BEILLARD, Philippe [FR/BE]; (AT) (For US Only).
SLOTBOOM, Jan [NL/NL]; (AT) (For US Only)
Inventors: DONKERS, Johannes; (AT).
KRAMER, Mark; (AT).
MEUNIER-BEILLARD, Philippe; (AT).
SLOTBOOM, Jan; (AT)
Agent: WILLIAMSON, Paul, L.; (GB)
Priority Data:
08104054.5 21.05.2008 EP
Title (EN) A TRANSISTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
(FR) DISPOSITIF À TRANSISTORS ET PROCÉDÉ POUR SA FABRICATION
Abstract: front page image
(EN)A transistor device (700) which comprises a substrate (402), a bipolar transistor (704) formed on and/or in the substrate (402), the bipolar transistor (704) comprising a collector region (500) comprising a SiGe layer, a base region (502) formed on the collector region (500) and comprising a SiGe layer, and an emitter region (504) formed on the base region (502) and comprising a Si/SiGe layer, the transistor device (700) further comprising a field effect transistor (410) formed on and/or in the substrate (402), the field effect transistor (412) comprising a gate region (410) extending up to a vertical level which is lower than a vertical level up to which the collector region (500) extends.
(FR)L'invention concerne un dispositif (700) à transistors qui comprend un substrat (402), un transistor bipolaire (704) formé sur et/ou dans le substrat (402), le transistor bipolaire (704) comprenant une région de collecteur (500) qui contient une couche de SiGe, une région de base (502) formée sur la région de collecteur (500) et contenant une couche de SiGe et une région d'émetteur (504) formée sur la région de base (502) et comprenant une couche de Si/SiGe, le dispositif à transistors (700) comprenant en outre un transistor à effet de champ (410) formé sur et/ou dans le substrat (402), le transistor (412) à effet de champ comprenant une région de grille (410) qui s'étend jusqu'à un niveau vertical plus bas que le niveau vertical jusqu'auquel la région de collecteur (500) s'étend.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)