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Machine translation
1. (WO2009141724) FORMATION OF SUBSTANTIALLY PIT FREE INDIUM GALLIUM NITRIDE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/141724    International Application No.:    PCT/IB2009/005716
Publication Date: 26.11.2009 International Filing Date: 22.05.2009
IPC:
H01L 33/00 (2010.01), H01L 21/18 (2006.01)
Applicants: S.O.I.TEC Silicon on Insulator Technologies [FR/FR]; chemin des Franques Parc Technologique des Fontaines F-38190 Bernin (FR) (For All Designated States Except US).
ARENA, Chantal [US/US]; (US) (For US Only)
Inventors: ARENA, Chantal; (US)
Priority Data:
61/055,893 23.05.2008 US
Title (EN) FORMATION OF SUBSTANTIALLY PIT FREE INDIUM GALLIUM NITRIDE
(FR) ÉLABORATION DE NITRURE DE GALLIUM D’INDIUM ESSENTIELLEMENT SANS CRATÈRE
Abstract: front page image
(EN)A method of fabricating a device layer structure includes providing a Hi-nitride semiconductor layer which is bonded to a bonding substrate. A device layer structure is formed on a nitrogen polar surface of the Ill-nitride semiconductor layer. The device layer structure includes an indium gallium nitride layer with a metal polar surface adjacent to the nitrogen polar surface of the ID-nitride semiconductor layer.
(FR)La présente invention concerne un procédé de fabrication d’une structure de couche de dispositif qui comprend la fourniture d’une couche semi-conductrice de nitrure III fixée à un substrat de liaison. Une structure de couche de dispositif est formée sur une surface polaire d’azote de la couche semi-conductrice de nitrure III. La structure de couche de dispositif comprend une couche de nitrure de gallium d’indium dotée d’une surface polaire métallique adjacente à la surface polaire d’azote de la couche semi-conductrice de nitrure III.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)