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1. (WO2009140395) SEMICONDUCTOR FOR USE IN HARSH ENVIRONMENTS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/140395    International Application No.:    PCT/US2009/043800
Publication Date: 19.11.2009 International Filing Date: 13.05.2009
Chapter 2 Demand Filed:    12.03.2010    
IPC:
H01L 21/18 (2006.01), H01L 21/336 (2006.01), H01L 33/02 (2010.01), H01L 31/10 (2006.01)
Applicants: BAKER HUGHES INCORPORATED [US/US]; P. O. Box 4740 Houston, TX 77210-4740 (US) (For All Designated States Except US).
CSUTAK, Sebastian [RO/US]; (US) (For US Only)
Inventors: CSUTAK, Sebastian; (US)
Agent: BYNUM, Todd, A.; Baker Hughes Incorporated P. O. Box 4740 Houston, TX 77210-4740 (US)
Priority Data:
12/120,562 14.05.2008 US
Title (EN) SEMICONDUCTOR FOR USE IN HARSH ENVIRONMENTS
(FR) SEMI-CONDUCTEUR À UTILISER DANS DES ENVIRONNEMENTS RUDES
Abstract: front page image
(EN)A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region may have at least two nitride-based barrier layers, and a nitride-based blocking layer may be disposed between the at least two barrier layers.
(FR)L'invention concerne un appareil à semi-conducteurs au nitrure de gallium qui peut comprendre une région active présentant une ou plusieurs couches barrières à base de nitrures qui sont dopées par modulation au moyen d'une couche dopée à base de nitrures. Une région active peut comprendre au moins deux couches barrières à base de nitrures, et une couche de blocage à base de nitrures peut être disposée entre les deux, ou plus de deux, couches barrières.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)