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1. (WO2009140305) CORRELATED ELECTRON MATERIAL AND PROCESS FOR MAKING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/140305    International Application No.:    PCT/US2009/043668
Publication Date: 19.11.2009 International Filing Date: 12.05.2009
IPC:
H01L 45/00 (2006.01), H01L 27/24 (2006.01)
Applicants: SYMETRIX CORPORATION [US/US]; 5055 Mark Dabling Boulevard Colorado Springs, CO 80918 (US) (For All Designated States Except US).
CELINSKA, Jolanta [US/US]; (US) (For US Only).
PAZ DE ARAUJO, Carlos, A. [US/US]; (US) (For US Only)
Inventors: CELINSKA, Jolanta; (US).
PAZ DE ARAUJO, Carlos, A.; (US)
Agent: FOREST, Carl, A.; (US)
Priority Data:
61/052,352 12.05.2008 US
Title (EN) CORRELATED ELECTRON MATERIAL AND PROCESS FOR MAKING
(FR) MATÉRIAU À ÉLECTRON CORRÉLÉ ET PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)An integrated circuit resistive switching component includes a resistive switching cell, including a correlated electron material (CEM) (90) between a bottom electrode (88) and a top electrode (92). The CEM includes a plurality of layers, each having a different carbon content. The different layers are preferably formed by using precursors having different molarity. The bottom electrode is composed of tungsten and titanium nitride. The top electrode is composed of titanium nitride and aluminum.
(FR)Selon l’invention, un composant de commutation résistif à circuit intégré comprend une cellule de commutation résistive, comprenant un matériau à électron corrélé (CEM) (90) entre une électrode inférieure (88) et une électrode supérieure (92). Le CEM comprend une pluralité de couches, ayant chacune une teneur en carbone différente. Les différentes couches sont de préférence formées à l’aide de précurseurs ayant une molarité différente. L’électrode inférieure est composée de tungstène et de nitrure de titane. L’électrode supérieure est composée de nitrure de titane et d’aluminium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)