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Machine translation
1. (WO2009140224) POWER FIELD EFFECT TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/140224    International Application No.:    PCT/US2009/043518
Publication Date: 19.11.2009 International Filing Date: 11.05.2009
IPC:
H01L 29/80 (2006.01), H01L 29/808 (2006.01)
Applicants: VISHAY-SILICONIX [US/US]; 2201 Laurelwood Road Santa Clara, CA 95054 (US) (For All Designated States Except US).
LI, Jian [US/US]; (US) (For US Only).
OWYANG, King [US/US]; (US) (For US Only)
Inventors: LI, Jian; (US).
OWYANG, King; (US)
Agent: GALLENSON, Mavis, S.; (US)
Priority Data:
12/119,367 12.05.2008 US
Title (EN) POWER FIELD EFFECT TRANSISTOR
(FR) TRANSISTOR DE PUISSANCE À EFFET DE CHAMP
Abstract: front page image
(EN)An ultra-short channel hybrib power field effect transistor (FET) device that lets current flow from bulk silicon without NPN parasitic. The device includes a JFET component, a first accumulation MOSFET disposed adjacent to the JFET component, and a second accumulation MOSFET disposed adjacent to the JFET component at the bottom of the trench end, or a MOSFET with an isolated gate connecting the source.
(FR)La présente invention concerne un dispositif à transistor de puissance à effet de champ (FET) hybride et à canal ultra-court qui laisse passer le courant provenant d'un silicium massif sans effet parasite NPN. Le dispositif comprend un composant JFET, un premier MOSFET à accumulation disposé à côté du composant JFET et un second MOSFET à accumulation disposé à côté du composant JFET, au bas de l'extrémité de tranchée, ou un MOSFET ayant une grille isolée connectant la source.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)