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Pub. No.:    WO/2009/139603    International Application No.:    PCT/KR2009/002596
Publication Date: 19.11.2009 International Filing Date: 15.05.2009
H01L 33/00 (2010.01), H01L 33/44 (2010.01)
Applicants: LG INNOTEK CO., LTD [KR/KR]; 33Fl., LG Twin Tower West 20 Yeouido-dong, Yeongdeungpo-gu Seoul 150-721 (KR) (For All Designated States Except US).
LIM, Woo Sik [KR/KR]; (KR) (For US Only)
Inventors: LIM, Woo Sik; (KR)
Agent: SEO, Kyo Jun; (KR)
Priority Data:
10-2008-0045740 16.05.2008 KR
(KO) 반도체 발광소자
Abstract: front page image
(EN)The embodiment relates to a semiconductor light-emitting device. The semiconductor light-emitting device of the embodiment comprises a first conductive-type semiconductor layer, an active layer below the said first conductive-type semiconductor layer; a second conductive-type semiconductor layer below the said active layer; a second electrode layer below the said second conductive-type semiconductor layer, and an insulation layer around the circumference of at least 2 of the said first conductive-type conductor layer, the said active layer and the said second conductive-type conductor layer.
(FR)Dans un mode de réalisation, l'invention concerne un dispositif électroluminescent semi-conducteur. Le dispositif électroluminescent semi-conducteur du mode de réalisation comprend une première couche semi-conductrice de type conductrice, une couche active sous ladite couche semi-conductrice de type conductrice; une seconde couche semi-conductrice de type conductrice sous ladite couche active; une seconde couche d'électrode sous ladite seconde couche semi-conductrice de type conductrice, et une couche isolante autour de la circonférence d'au moins 2 couches sélectionnées parmi ladite première couche semi-conductrice de type conductrice, ladite couche active et ladite seconde couche semi-conductrice de type conductrice.
(KO)실시 예는 반도체 발광소자에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제1도전형 반도체층; 상기 제1도전형 반도체층 아래에 활성층; 상기 활성층 아래에 제2도전형 반도체층; 상기 제2도전형 반도체층 아래에 제2전극층; 및 상기 제1도전형 반도체층, 상기 활성층 및 상기 제2도전형 반도체층 중 적어도 2개의 층 둘레에 절연층을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)