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1. (WO2009137241) PROCESS FOR FABRICATING NANOWIRE ARRAYS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2009/137241 International Application No.: PCT/US2009/040552
Publication Date: 12.11.2009 International Filing Date: 14.04.2009
IPC:
G01N 33/53 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
33
Investigating or analysing materials by specific methods not covered by groups G01N1/-G01N31/131
48
Biological material, e.g. blood, urine; Haemocytometers
50
Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
53
Immunoassay; Biospecific binding assay; Materials therefor
Applicants:
BANDGAP ENGINEERING, INC. [US/US]; 6 Gill Street, Suite H Woburn, MA 01801, US (AllExceptUS)
BUCHINE, Brent, A. [US/US]; US (UsOnly)
MODAWAR, Faris [US/US]; US (UsOnly)
BLACK, Marcie, R. [US/US]; US (UsOnly)
Inventors:
BUCHINE, Brent, A.; US
MODAWAR, Faris; US
BLACK, Marcie, R.; US
Agent:
ROSE, Flavio, M.; Irell & Manella LLP 1800 Avenue of the Stars Los Angeles, CA 90067, US
Priority Data:
61/044,57314.04.2008US
61/141,08229.12.2008US
Title (EN) PROCESS FOR FABRICATING NANOWIRE ARRAYS
(FR) PROCÉDÉ DE FABRICATION DE RÉSEAUX DE NANOFILS
Abstract:
(EN) A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.
(FR) La présente invention concerne un procédé permettant la gravure d'un substrat contenant du silicium pour former des réseaux de nanofils. Selon ce procédé, des nanoparticules et un film métallique sont déposés sur le substrat de sorte que le métal soit présent et en contact avec le silicium où la gravure est souhaitée et ne puisse pas être en contact avec le silicium ni présent à tout autre endroit. Le substrat métallisé est immergé dans une solution aqueuse de gravure comportant de l'acide fluorhydrique et un agent oxydant. Ainsi on obtient des réseaux de nanofils de diamètre et longueur contrôlés.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2277045JP2011523902CN102084467IN6570/CHENP/2010