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1. (WO2009137020) ULTRATOUGH SINGLE CRYSTAL BORON-DOPED DIAMOND
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/137020    International Application No.:    PCT/US2009/002753
Publication Date: 12.11.2009 International Filing Date: 05.05.2009
IPC:
H01L 31/0312 (2006.01)
Applicants: CARNEGIE INSTITUTION OF WASHINGTON [US/US]; 1530 P Street NW Washington, DC 20005 (US) (For All Designated States Except US).
LIANG, Qi [CN/US]; (US) (For US Only).
YAN, Chih-Shiue [US/US]; (US) (For US Only).
MAO, Ho-Kwang [US/US]; (US) (For US Only).
HEMLEY, Russell [US/US]; (US) (For US Only)
Inventors: LIANG, Qi; (US).
YAN, Chih-Shiue; (US).
MAO, Ho-Kwang; (US).
HEMLEY, Russell; (US)
Agent: SULLIVAN, Mark J.; Morgan, Lewis & Bockius LLP 1111 Pennsylvania Avenue, NW Washington, DC 20004 (US)
Priority Data:
61/071,524 05.05.2008 US
Title (EN) ULTRATOUGH SINGLE CRYSTAL BORON-DOPED DIAMOND
(FR) DIAMANT DOPÉ AU BORE MONOCRISTALLIN ULTRARÉSISTANT
Abstract: front page image
(EN)The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 μm/h.
(FR)L'invention porte sur un diamant obtenu par dépôt chimique en phase vapeur (CVD) dopé au bore monocristallin qui possède une ténacité d'au moins environ 22 MPa m1/2. L'invention porte en outre sur un procédé de fabrication d'un diamant CVD dopé au bore monocristallin. La vitesse de croissance du diamant peut être à partir d'environ 20-100 µm/h.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)