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1. (WO2009136767) A FERROELECTRIC MATERIAL AND A FERROELECTRIC LAYER FORMATION METHOD USING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/136767    International Application No.:    PCT/KR2009/002445
Publication Date: 12.11.2009 International Filing Date: 08.05.2009
IPC:
H01B 3/00 (2006.01), H01L 41/00 (2006.01)
Applicants: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION [KR/KR]; University of Seoul 90, Jeonnong-dong Dongdaemun-gu Seoul 130-744 (KR) (For All Designated States Except US).
PARK, Byung-Eun [KR/KR]; (KR) (For US Only)
Inventors: PARK, Byung-Eun; (KR)
Agent: HONG, Sung-Hun; (KR)
Priority Data:
10-2008-0042854 08.05.2008 KR
Title (EN) A FERROELECTRIC MATERIAL AND A FERROELECTRIC LAYER FORMATION METHOD USING THE SAME
(FR) MATÉRIAU FERROÉLECTRIQUE ET PROCÉDÉ DE FORMATION D'UNE COUCHE FERROÉLECTRIQUE AU MOYEN DE CE MATÉRIAU
(KO) 강유전 물질과 이를 이용한 강유전체층의 형성방법
Abstract: front page image
(EN)The present invention relates to a ferroelectric material used as a component of an electronic and electrical material and a ferroelectric layer formation method using the same. In one embodiment of the present invention, a metallic material, Fe, is mixed with an existing ferroelectric material to form a novel ferroelectric material. The ferroelectric material of the present invention has a very high value of remanent polarization, compared with existing ferroelectric materials. Accordingly, the ferroelectric material according to the present invention can advantageously be employed as a material for a semiconductor memory or piezoelectric element, etc.
(FR)La présente invention concerne un matériau ferroélectrique utilisé comme constituant d'un matériau électronique et électrique et un procédé de formation d'une couche ferroélectrique au moyen de ce matériau ferroélectrique. Dans un mode de réalisation de la présente invention, un matériau métallique, Fe, est mélangé à un matériau ferroélectrique existant pour former un nouveau matériau ferroélectrique. Le matériau ferroélectrique selon l'invention présente une valeur de polarisation rémanente très élevée par rapport aux matériaux ferroélectriques existants. Le matériau ferroélectrique selon l'invention peut, de manière avantageuse, être employé comme matériau destiné à une mémoire à semi-conducteurs ou un élément piézoélectrique, etc.
(KO)본 발명은 전자 및 전기 재료의 구성물로서 사용되는 강유전 물질과 이를 이용한 강유전체층의 형성방법에 관한 것이다. 본 발명에 있어서는 기존의 강유전 물질에 금속물질로서 Fe을 혼합하여 신규한 강유전 물질을 형성하게 된다. 본 발명에 따른 강유전 물질은 기존의 강유전 물질에 비해 잔류분극값이 매우 큰 값을 갖게 된다. 따라서, 본 발명에 따른 강유전 물질은 반도체 메모리나 압전소자 등의 재질로서 훌륭하게 채용하여 사용할 수 있게 된다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)