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Machine translation
1. (WO2009136718) SEMICONDUCTOR ELEMENT AND A PRODUCTION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/136718    International Application No.:    PCT/KR2009/002353
Publication Date: 12.11.2009 International Filing Date: 04.05.2009
IPC:
H01L 21/18 (2006.01)
Applicants: LG INNOTEK CO., LTD [KR/KR]; 33Fl., LG Twin Tower West 20 Yeouido-dong, Yeongdeungpo-gu Seoul 150-721 (KR) (For All Designated States Except US).
SONG, June O [KR/KR]; (KR) (For US Only)
Inventors: SONG, June O; (KR)
Agent: SEO, Kyo Jun; (KR)
Priority Data:
10-2008-0041605 04.05.2008 KR
Title (EN) SEMICONDUCTOR ELEMENT AND A PRODUCTION METHOD THEREFOR
(FR) ÉLÉMENT SEMI-CONDUCTEUR ET PROCÉDÉ POUR SA PRODUCTION
(KO) 반도체 소자 및 그 제조방법
Abstract: front page image
(EN)According to an embodiment of this invention, a semiconductor element comprises: a growth substrate; a first buffer layer having the composition RexSiy(0≤x≤2, 0≤y≤2), on the growth substrate; and a group 3 nitride-based single-crystal semiconductor layer having the composition InxAlyGa1-x-yN(0≤x, 0≤y, x+y≤1), on the buffer layer.
(FR)Dans un mode de réalisation de la présente invention, un élément semi-conducteur comprend : un substrat de croissance, une première couche tampon de composition RexSiy (0 ≤ x ≤2, 0 ≤ y ≤2), sur le substrat de croissance et une couche semi-conductrice monocristalline à base de nitrure d'un élément du groupe 3 et de composition InxAlyGa1-x-yN (0 ≤ x, 0 ≤ y, x+y ≤ 1) sur la couche tampon.
(KO)실시예에 따른 반도체 소자는 성장 기판; 상기 성장 기판 상에 RexSiy(0≤x≤2, 0≤y≤2)의 조성을 갖는 제1 버퍼층; 및 상기 버퍼층 상에 InxAlyGa1-x-yN(0≤x, 0≤y, x+y≤1)의 조성을 갖는 그룹 3족 질화물계 단결정 반도체층을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)