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1. (WO2009135349) SEMICONDUCTOR DETECTOR AND IMAGING APPARATUS FOR RADIATION MEASURING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/135349    International Application No.:    PCT/CN2008/002054
Publication Date: 12.11.2009 International Filing Date: 24.12.2008
IPC:
H01L 27/14 (2006.01), H01L 31/00 (2006.01), G01T 1/24 (2006.01), H05G 1/64 (2006.01)
Applicants: NUCTECH COMPANY LIMITED [CN/CN]; 2nd Floor, Block A TongFang Building Shuangqinglu Haidian District Beijing 100084 (CN) (For All Designated States Except US).
TSINGHUA UNIVERSITY [CN/CN]; Haidian District Beijing 100084 (CN) (For All Designated States Except US).
ZHANG, Lan [CN/CN]; (CN) (For US Only).
LI, Yuanjing [CN/CN]; (CN) (For US Only).
LI, Yulan [CN/CN]; (CN) (For US Only).
LIU, Yinong [CN/CN]; (CN) (For US Only).
ZHAO, Ziran [CN/CN]; (CN) (For US Only).
ZHANG, Li [CN/CN]; (CN) (For US Only).
WU, Wanlong [CN/CN]; (CN) (For US Only).
ZHU, Weibin [CN/CN]; (CN) (For US Only).
ZHENG, Xiaocui [CN/CN]; (CN) (For US Only).
YAO, Nan [CN/CN]; (CN) (For US Only).
DENG, Zhi [CN/CN]; (CN) (For US Only)
Inventors: ZHANG, Lan; (CN).
LI, Yuanjing; (CN).
LI, Yulan; (CN).
LIU, Yinong; (CN).
ZHAO, Ziran; (CN).
ZHANG, Li; (CN).
WU, Wanlong; (CN).
ZHU, Weibin; (CN).
ZHENG, Xiaocui; (CN).
YAO, Nan; (CN).
DENG, Zhi; (CN)
Agent: CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.; 25/F., Bldg. B, Tsinghua Tongfang Hi-Tech Plaza, No. 1 Wangzhuang Rd., Haidain District, Beijing 100083 (CN)
Priority Data:
200810106279.6 09.05.2008 CN
Title (EN) SEMICONDUCTOR DETECTOR AND IMAGING APPARATUS FOR RADIATION MEASURING
(FR) DÉTECTEUR À SEMICONDUCTEUR ET APPAREIL D’IMAGERIE POUR LA MESURE DES RAYONNEMENTS
(ZH) 用于测量辐射的半导体探测器及成像装置
Abstract: front page image
(EN)A semiconductor detector and an imaging apparatus for radiation measuring, wherein the semiconductor detector includes: a semiconductor medium, which can absorb at least one energy band of radiation to be measured; an anode and a cathode, which are respectively formed on the opposite surfaces of the semiconductor medium; and a signal-processing circuit, which connects with the said anode and cathode. The said semiconductor medium receives the radiation with which parallel the surface of the electrodes, and the said anode and cathode are divided into separated sub-electrode pairs according to the incident direction of the radiation, thus to measure the energy accumulation of the corresponding radiation energy band.
(FR)Détecteur à semiconducteur et appareil d’imagerie pour la mesure des rayonnements, le détecteur à semiconducteur comprenant : un milieu semiconducteur capable d’absorber au moins une bande d’énergie d’un rayonnement à mesurer ; une anode et une cathode formées respectivement sur les surfaces opposées du milieu semiconducteur ; et un circuit de traitement de signaux relié à ladite anode et à ladite cathode. Ledit milieu semiconducteur reçoit le rayonnement qui est parallèle à la surface des électrodes, ladite anode et ladite cathode étant divisées en paires séparées de sous-électrodes suivant la direction incidente du rayonnement, de façon à mesurer l’énergie cumulée de la bande d’énergie considérée du rayonnement.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)