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Machine translation
1. (WO2009135102) LOW PH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/135102    International Application No.:    PCT/US2009/042480
Publication Date: 05.11.2009 International Filing Date: 01.05.2009
IPC:
G03F 7/42 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive Danbury, CT 06810 (US) (For All Designated States Except US).
COOPER, Emanuel [US/US]; (US) (For US Only).
CISSELL, Julie [US/US]; (US) (For US Only).
ZHOU, Renjie [US/US]; (US) (For US Only).
KORZENSKI, Michael, B. [US/US]; (US) (For US Only)
Inventors: COOPER, Emanuel; (US).
CISSELL, Julie; (US).
ZHOU, Renjie; (US).
KORZENSKI, Michael, B.; (US)
Agent: FUIERER, Tristan, A.; (US)
Priority Data:
61/049,600 01.05.2008 US
61/054,798 20.05.2008 US
61/093,954 03.09.2008 US
Title (EN) LOW PH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST
(FR) MÉLANGES À PH BAS POUR L’ÉLIMINATION DE RÉSERVE IMPLANTÉE À HAUTE DENSITÉ
Abstract: front page image
(EN)A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
(FR)La présente invention concerne un procédé et des compositions à pH bas pour éliminer un matériau de résine photosensible volumineux et/ou durci de dispositifs microélectroniques. Les compositions à pH bas comprennent au moins un acide minéral et au moins un agent oxydant. Les compositions à pH bas éliminent efficacement le matériau de résine photosensible durci sans endommager la/les couche(s) sous-jacente(s) contenant du silicium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)