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1. (WO2009134989) ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/134989    International Application No.:    PCT/US2009/042290
Publication Date: 05.11.2009 International Filing Date: 30.04.2009
IPC:
C07F 9/90 (2006.01), H01L 21/20 (2006.01), H01L 45/00 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive Danbury, CT 06810-4169 (US) (For All Designated States Except US).
CHEN, Tianniu [CN/US]; (US) (For US Only).
HUNKS, William [CA/US]; (US) (For US Only).
CHEN, Philip, S.H. [US/US]; (US) (For US Only).
XU, Chongying [US/US]; (US) (For US Only).
MAYLOTT, Leah [US/US]; (US) (For US Only)
Inventors: CHEN, Tianniu; (US).
HUNKS, William; (US).
CHEN, Philip, S.H.; (US).
XU, Chongying; (US).
MAYLOTT, Leah; (US)
Agent: HULTQUIST, Steven, J.; (US)
Priority Data:
61/050,111 02.05.2008 US
Title (EN) ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS
(FR) COMPOSÉS D’ANTIMOINE UTILISÉS DANS LE DÉPÔT DE MATÉRIAUX CONTENANT DE L’ANTIMOINE
Abstract: front page image
(EN)Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
(FR)L’invention concerne des précurseurs utilisés lors du dépôt de films contenant de l’antimoine sur des substrats comme des plaquettes ou d’autres substrats de dispositifs microélectroniques, ainsi que des emballages sources de ces précurseurs. Les précurseurs sont utilisés dans le dépôt de films fins de chalcogénure Ge2Sb2Te5 lors de la fabrication de mémoires à changement de phase (PCM) non volatiles ou lors de la fabrication de dispositifs thermoélectriques, selon des techniques de dépôt comme la déposition chimique en phase vapeur (DCPV) ou le dépôt par couche atomique (ALD).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)