WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2009134109) LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/134109    International Application No.:    PCT/KR2009/002352
Publication Date: 05.11.2009 International Filing Date: 04.05.2009
IPC:
H01L 33/00 (2010.01), H01L 33/14 (2010.01), H01L 33/16 (2010.01), H01L 33/32 (2010.01)
Applicants: LG INNOTEK CO., LTD [KR/KR]; 33Fl., LG Twin Tower West 20 Yeouido-dong, Yeongdeungpo-gu Seoul 150-721 (KR) (For All Designated States Except US).
SONG, June O [KR/KR]; (KR) (For US Only)
Inventors: SONG, June O; (KR)
Agent: SEO, Kyo Jun; (KR)
Priority Data:
10-2008-0041097 02.05.2008 KR
10-2008-0041102 02.05.2008 KR
10-2008-0041105 02.05.2008 KR
Title (EN) LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR
(FR) ÉLÉMENT ÉLECTROLUMINESCENT ET SON PROCÉDÉ DE FABRICATION
(KO) 발광 소자 및 그 제조방법
Abstract: front page image
(EN)According to an embodiment of this invention, a light emitting element comprises: a supporting substrate; wafer-bonding layer on the supporting substrate; a current-spreading layer on the wafer-bonding layer; a second electrically conductive semiconductor layer on the current-spreading layer; an active layer on the second electrically conductive semiconductor layer; a first electrically conductive semiconductor layer on the active layer; a surface-modification layer on the first electrically conductive semiconductor layer; and a first electrode layer on the surface-modification layer.
(FR)Dans un mode de réalisation, l'invention concerne un élément électroluminescent comprenant un substrat de support, une couche de collage de plaquettes située sur le substrat de support, une couche d'étalement de courant située sur la couche de collage de plaquettes, une seconde couche de semi-conducteur électroconductrice située sur la couche d'étalement de courant, une couche active située sur la seconde couche de semi-conducteur électroconductrice, une première couche de semi-conducteur électroconductrice située sur la couche active, une couche de modification de surface située sur la première couche de semi-conducteur électroconductrice, ainsi qu'une première couche d'électrode située sur la couche de modification de surface.
(KO)실시예에 따른 발광 소자는 지지 기판; 상기 지지 기판 상에 웨이퍼 결합층; 상기 웨이퍼 결합층 상에 전류 퍼짐층; 상기 전류 퍼짐층 상에 제2 도전형의 반도체층; 상기 제2 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제1 도전형의 반도체층; 상기 제1 도전형의 반도체층 상에 표면 개질층; 및 상기 표면 개질층 상에 제1 전극층을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)