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1. (WO2009134080) METHOD FOR DEPOSITING POLYSILICON THIN FILM WITH ULTRA-FINE CRYSTAL GRAINS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/134080    International Application No.:    PCT/KR2009/002266
Publication Date: 05.11.2009 International Filing Date: 29.04.2009
IPC:
H01L 21/205 (2006.01)
Applicants: EUGENE TECHNOLOGY CO., LTD. [KR/KR]; 209-3 Chugye-ri, Yangji-myeon, Cheoin-gu Yongin-si, Gyeonggi-do 449-824 (KR) (For All Designated States Except US).
KIM, Hai Won [KR/KR]; (KR) (For US Only).
WOO, Sang Ho [KR/KR]; (KR) (For US Only).
CHO, Sung Gil [KR/KR]; (KR) (For US Only).
PARK, Song Hwan [KR/KR]; (KR) (For US Only).
JUNG, Kyung Soo [KR/KR]; (KR) (For US Only)
Inventors: KIM, Hai Won; (KR).
WOO, Sang Ho; (KR).
CHO, Sung Gil; (KR).
PARK, Song Hwan; (KR).
JUNG, Kyung Soo; (KR)
Agent: KIM, Inhan; (KR)
Priority Data:
10-2008-0041177 02.05.2008 KR
Title (EN) METHOD FOR DEPOSITING POLYSILICON THIN FILM WITH ULTRA-FINE CRYSTAL GRAINS
(FR) PROCÉDÉ DE DÉPÔT D'UN FILM MINCE DE POLYSILICIUM COMPRENANT DES GRAINS CRISTALLINS ULTRA-FINS
(KO) 극미세 결정립 폴리 실리콘 박막 증착 방법
Abstract: front page image
(EN)Disclosed is a method for depositing a polysilicon thin film with ultra-fine crystal grains. According to the present invention, the polysilicon thin film is deposited on a substrate by supplying source gases inside a chamber in which the substrate is loaded, wherein the source gases include a silicon-based gas and an oxygen-based gas. The mixing ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or less (excluding 0). The oxygen within the thin film may be 20 atomic% (atomic percentage) or less (excluding 0).
(FR)L'invention concerne un procédé de dépôt d'un film mince de polysilicium comprenant des grains cristallins ultra-fins. Selon l'invention, le film mince de polysilicium est déposé sur un substrat par acheminement de gaz sources à l'intérieur d'une chambre dans laquelle le substrat est chargé, ces gaz sources contenant un gaz à base de silicium et un gaz à base d'oxygène. Le rapport de mélange entre le gaz à base d'oxygène et le gaz à base de silicium peut être inférieur ou égal à 0,15, mais non nul. L'oxygène à l'intérieur du film mince peut être inférieur ou égal à 20 % atomiques (pourcentage atomique), mais non nul.
(KO)본 발명에 의하면, 극미세 결정립 폴리 실리콘 박막 증착 방법은 기판이 로딩된 챔버 내에 소스가스를 공급하여 상기 기판 상에 폴리실리콘 박막을 증착하되, 상기 소스가스는 실리콘 계열(silicon-based)의 가스 및 산소 계열(Oxygen-based)의 가스를 포함한다. 상기 실리콘 계열의 가스에 대한 상기 산소 계열의 가스의 혼합비율은 0.15 이하(단, 0은 제외)일 수 있다. 상기 박막 내의 산소는 20 atomic%(atomic percentage) 이하(단, 0은 제외)일 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)