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1. (WO2009133720) EPITAXIAL SILICON WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/133720    International Application No.:    PCT/JP2009/052487
Publication Date: 05.11.2009 International Filing Date: 16.02.2009
IPC:
C30B 29/06 (2006.01)
Applicants: SUMCO CORPORATION [JP/JP]; 2-1, Shibaura 1-chome, Minato-ku, Tokyo 1058634 (JP) (For All Designated States Except US).
FUJIWARA, Toshiyuki [JP/JP]; (JP) (For US Only).
ASAYAMA, Eiichi [JP/JP]; (JP) (For US Only).
HOSOI, Takehiko [JP/JP]; (JP) (For US Only).
NAKAMURA, Tsuyoshi [JP/JP]; (JP) (For US Only)
Inventors: FUJIWARA, Toshiyuki; (JP).
ASAYAMA, Eiichi; (JP).
HOSOI, Takehiko; (JP).
NAKAMURA, Tsuyoshi; (JP)
Agent: ABE, Itsurou; ABE International Patent Office, Complete Sakaimachi BLDG. 403, 9-6, Sakaimachi 1-chome, Kokurakita-ku, Kitakyushu-shi, Fukuoka 8020005 (JP)
Priority Data:
2008-119352 30.04.2008 JP
Title (EN) EPITAXIAL SILICON WAFER
(FR) PLAQUETTE DE SILICIUM ÉPITAXIAL
(JA) エピタキシャルシリコンウェーハ
Abstract: front page image
(EN)A substrate silicon wafer is manufactured by using, as a material, a silicon single crystal which does not include a COP region, an oxidation-inducing potential multilayer defect region and a dislocation cluster region. Therefore, a defect of the substrate silicon wafer does not easily influence defect formation of a silicon epitaxial film.
(FR)Une plaquette de silicium formant substrat est fabriquée en utilisant comme matériau un monocristal de silicium qui ne comporte ni une région COP, ni une région défectueuse à couches multiples présentant un potentiel d'induction d'oxydation, ni une région d'amas de dislocation. Par conséquent, un défaut de la plaquette de silicium formant substrat n'influence pas facilement la formation d'un défaut d'un film épitaxial de silicium.
(JA) COP領域、酸化誘起積層欠陥潜在領域を含まず、かつ転位クラスタ領域を含まないシリコン単結晶から基板シリコンウェーハを作製するので、基板シリコンウェーハの欠陥がシリコンエピタキシャル膜の欠陥形成に影響し難くなる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)