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1. (WO2009133315) PROCESS FOR FABRICATING A SILICON-BASED THIN-FILM PHOTOVOLTAIC CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/133315    International Application No.:    PCT/FR2009/000461
Publication Date: 05.11.2009 International Filing Date: 20.04.2009
IPC:
H01L 31/18 (2006.01), H01L 31/20 (2006.01)
Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; 25 , rue Leblanc Bâtiment « Le Ponant D » F-75015 Paris (FR) (For All Designated States Except US).
DUCROS, Cédric [FR/FR]; (FR) (For US Only).
SANCHETTE , Frédéric [FR/FR]; (FR) (For US Only).
SECOUARD, Christophe [FR/FR]; (FR) (For US Only)
Inventors: DUCROS, Cédric; (FR).
SANCHETTE , Frédéric; (FR).
SECOUARD, Christophe; (FR)
Agent: NOËL, Chantal; Cabinet Ores 36, rue de St Pétersbourg F-75008 Paris (FR)
Priority Data:
08/02270 23.04.2008 FR
Title (EN) PROCESS FOR FABRICATING A SILICON-BASED THIN-FILM PHOTOVOLTAIC CELL
(FR) PROCEDE DE FABRICATION D'UNE CELLULE PHOTOVOLTAÏQUE A BASE DE SILICIUM EN COUCHES MINCES
Abstract: front page image
(EN)The invention relates to a process for fabricating a silicon-based thin-film photovoltaic cell. This fabrication process is characterized in that it includes a step a) of depositing a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which has a line centred at 28° that has a mid-height width, denoted by a, such that 4.7° ≤ a < 6.0° on a substrate (1). The invention is applicable in particular in the energy generation field.
(FR)L'invention concerne un procédé de fabrication d'une cellule photovoltaïque à base de silicium en couches minces. Ce procédé de fabrication est caractérisé en ce qu'il comprend une étape a) de dépôt d'une couche de silicium amorphe, dopé p ou dopé n, dont le spectre de diffraction des rayons X présente une raie centrée à 28° ayant une largeur à mi-hauteur, notée a, telle que 4°, 7 ≤ a < 6°,0 sur un substrat (1). L'invention trouve application dans le domaine de la production d'énergie, en particulier.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)