WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2009133174) DICING A SEMICONDUCTOR WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/133174    International Application No.:    PCT/EP2009/055274
Publication Date: 05.11.2009 International Filing Date: 30.04.2009
IPC:
H01L 21/78 (2006.01), B23K 26/06 (2006.01), B23K 26/40 (2006.01)
Applicants: ELECTRO SCIENTIFIC INDUSTRIES, INC. [US/US]; 13900 NW Science Park Drive Portland, Oregon 97229-5497 (US) (For All Designated States Except US).
BOYLE, Adrian [IE/IE]; (IE) (For US Only).
CALLAGHAN, Joseph [IE/IE]; (IE) (For US Only).
McKIERNAN, Fintan [IE/IE]; (IE) (For US Only)
Inventors: BOYLE, Adrian; (IE).
CALLAGHAN, Joseph; (IE).
McKIERNAN, Fintan; (IE)
Agent: Want, Clifford, J.; (GB)
Priority Data:
0807780.2 30.04.2008 GB
Title (EN) DICING A SEMICONDUCTOR WAFER
(FR) DÉCOUPAGE EN TRANCHES D’UNE PLAQUETTE SEMI-CONDUCTRICE
Abstract: front page image
(EN)A method of dicing a semiconductor wafer comprises scribing at least one dielectric layer along dice lanes to remove material from a surface of the wafer using a laser with a pulse-width between 1 picosecond and 1000 picoseconds and with a repetition frequency corresponding to times between pulses shorter than a thermal relaxation time of the material to be scribed. The wafer is then diced through a metal layer and at least partially through a substrate of the semiconductor wafer.
(FR)La présente invention concerne un procédé de découpage en tranches d’une plaquette semi-conductrice, qui comprend le rainurage d’au moins une couche diélectrique le long de lignes de découpe pour enlever le matériau d’une surface de la plaquette à l’aide d’un laser ayant une largeur d’impulsion comprise entre 1 picoseconde et 1 000 picosecondes et une fréquence de répétition correspondant à des temps entre les impulsions plus courts qu’un temps de relaxation thermique du matériau à rainurer. La plaquette est ensuite découpée en tranches à travers une couche métallique et au moins partiellement à travers un substrat de la plaquette semi-conductrice.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)