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Pub. No.:    WO/2009/131319    International Application No.:    PCT/KR2009/001806
Publication Date: 29.10.2009 International Filing Date: 08.04.2009
H01L 33/00 (2010.01), H01L 33/38 (2010.01), H01L 33/42 (2010.01), H01L 33/44 (2010.01)
Applicants: LG INNOTEK CO., LTD [KR/KR]; 33Fl., LG Twin Tower West, 20, Yeouidodong Yeongdeungpo-gu Seoul 150-721 (KR) (For All Designated States Except US)
Inventors: JEONG, Hwan Hee; (KR)
Agent: SEO, Kyo Jun; (KR)
Priority Data:
10-2008-0036876 21.04.2008 KR
(KO) 반도체 발광소자
Abstract: front page image
(EN)An embodiment of the invention relates to a semiconductor light emitting device. The semiconductor light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer formed below the first conductive semiconductor layer; a second conductive semiconductor layer formed below the active layer; a second electrode layer formed below the second conductive semiconductor layer; and a light transmitting conductive layer formed in at least a part between the second conductive semiconductor layer and the second electrode layer.
(FR)Selon une variante, l'invention concerne un dispositif luminescent à semi-conducteurs qui comprend une première couche conductrice à semi-conducteurs; une couche active sous cette première couche; une seconde couche conductrice à semi-conducteurs sous la couche active; une seconde couche d'électrode sous la seconde couche conductrice à semi-conducteurs; et une couche conductrice transmettant la lumière dans au moins une partie entre la seconde couche conductrice à semi-conducteurs et la seconde couche d'électrode.
(KO)실시 예는 반도체 발광소자에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제1도전형 반도체층; 상기 제1도전형 반도체층 아래에 활성층; 상기 활성층 아래에 제2도전형 반도체층; 상기 제2도전형 반도체층 아래에 제2전극층; 상기 제2도전형 반도체층과 상기 제2전극층 사이의 적어도 일부에 투광성 전도층을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)