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1. (WO2009131132) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Pub. No.:    WO/2009/131132    International Application No.:    PCT/JP2009/057940
Publication Date: Oct 29, 2009 International Filing Date: Apr 15, 2009
IPC: H01L 21/02
B42D 15/10
G06K 19/07
G06K 19/077
H01L 27/12
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
EGUCHI, Shingo
Inventors: EGUCHI, Shingo
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Abstract:
In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.