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1. (WO2009129194) LARGE-AREA SINGLE- AND FEW-LAYER GRAPHENE ON ARBITRARY SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/129194    International Application No.:    PCT/US2009/040402
Publication Date: 22.10.2009 International Filing Date: 13.04.2009
IPC:
H01L 21/306 (2006.01), H01L 21/205 (2006.01), C23C 16/26 (2006.01), C01B 31/02 (2006.01)
Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US/US]; 77 Massachusetts Avenue Cambridge, MA 02139 (US) (For All Designated States Except US).
KONG, Jing [CN/US]; (US) (For US Only).
CECCO, Alfonso [MX/US]; (US) (For US Only).
DRESSELHAUS, Mildred [US/US]; (US) (For US Only)
Inventors: KONG, Jing; (US).
CECCO, Alfonso; (US).
DRESSELHAUS, Mildred; (US)
Agent: SAYRE, Robert; Modern Times Legal One Broadway, 14th Floor Cambridge, MA 02142 (US)
Priority Data:
61/044,569 14.04.2008 US
Title (EN) LARGE-AREA SINGLE- AND FEW-LAYER GRAPHENE ON ARBITRARY SUBSTRATES
(FR) GRAPHÈNE À UN PLAN ET À NOMBRE LIMITÉ DE PLANS DE GRANDE SURFACE SUR DES SUBSTRATS ARBITRAIRES
Abstract: front page image
(EN)A film of single-layer to few-layer graphene is formed by depositing a graphene film via chemical vapor deposition on a surface of a growth substrate. The surface on which the graphene is deposited can be a polycrystalline nickel film, which is deposited by evaporation on a SiO2/Si substrate. A protective support layer is then coated on the graphene film to provide support for the graphene film and to maintain its integrity when it is removed from the growth substrate. The surface of the growth substrate is then etched to release the graphene film and the protective support layer from the growth substrate, wherein the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. After being released from the growth substrate, the graphene film and protective support layer can be applied onto an arbitrary target substrate for evaluation or use in any of a wide variety of applications.
(FR)Selon l'invention, on forme une pellicule de graphène à un plan ou à nombre limité de plans en déposant, par dépôt chimique en phase vapeur, une pellicule de graphène sur la surface d'un substrat de croissance. La surface sur laquelle le graphène est déposé peut être une pellicule de nickel cristallin, que l'on dépose par évaporation sur un substrat SiO2/Si. On recouvre alors la pellicule de graphène d'une couche de support protectrice afin de soutenir la pellicule de graphène et de préserver son intégrité au moment où on l'enlève du substrat de croissance. On grave ensuite la surface du substrat de croissance afin de libérer la pellicule de graphène et la couche de support protectrice du substrat de croissance, la couche de support protectrice préservant l'intégrité de la pellicule de graphène au cours de son retrait et postérieurement à son retrait du substrat de croissance. Après avoir retiré la pellicule de graphène et la couche de support protectrice du substrat de croissance, on peut les appliquer sur un substrat cible arbitraire afin de les évaluer ou de les utiliser dans une large gamme d'applications.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)