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1. (WO2009126490) DOUBLE PATTERNING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/126490    International Application No.:    PCT/US2009/039121
Publication Date: 15.10.2009 International Filing Date: 01.04.2009
IPC:
H01L 21/027 (2006.01), H01L 21/033 (2006.01), H01L 21/308 (2006.01), H01L 21/321 (2006.01), H01L 21/3213 (2006.01)
Applicants: SANDISK 3D LLC [US/US]; 601 McCarthy Boulevard Milpitas, CA 95035-7932 (US) (For All Designated States Except US).
CHAN, Michael [US/US]; (US) (For US Only)
Inventors: CHAN, Michael; (US)
Agent: RADOMSKY, Leon; The Marbury Law Group, PLLC 11800 Sunrise Valley Drive, Suite 1000 Reston, VA 20191 (US)
Priority Data:
61/071,094 11.04.2008 US
12/216,107 30.06.2008 US
Title (EN) DOUBLE PATTERNING METHOD
(FR) PROCÉDÉ DE DOUBLE FORMATION DE MOTIF
Abstract: front page image
(EN)A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, and etching the underlying layer using both the first and the second photoresist patterns as a mask.
(FR)L'invention concerne un procédé de fabrication d'un dispositif qui consiste à former une première couche photorésistante sur une couche sous-jacente, à créer un motif sur la première couche photorésistante pour former un premier motif photorésistant, à rendre le premier motif photorésistant insoluble par un solvant, à former une seconde couche photorésistante sur le premier motif photorésistant, à créer un motif sur la seconde couche photorésistante pour former un second motif photorésistant sur la couche sous-jacente et à attaquer chimiquement la couche sous-jacente en utilisant les premier et second motifs photorésistants en tant que masques.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)