WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |

Search International and National Patent Collections
World Intellectual Property Organization
Machine translation
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/123038    International Application No.:    PCT/JP2009/056245
Publication Date: 08.10.2009 International Filing Date: 27.03.2009
H01L 21/3065 (2006.01), H01L 21/768 (2006.01)
Applicants: ZEON CORPORATION [JP/JP]; 6-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008246 (JP) (For All Designated States Except US).
SUZUKI, Takefumi [JP/JP]; (JP) (For US Only).
ITO, Azumi [JP/JP]; (JP) (For US Only)
Inventors: SUZUKI, Takefumi; (JP).
ITO, Azumi; (JP)
Agent: OHISHI, Haruhito; Kotani Bldg. 1F, 5-3, Uchikanda 2-chome Chiyoda-ku Tokyo 1010047 (JP)
Priority Data:
2008-091209 31.03.2008 JP
(JA) プラズマエッチング方法
Abstract: front page image
(EN)Disclosed is a plasma etching method that utilizes a processing gas under plasma conditions, wherein the plasma etching method is such that the aforementioned processing gas comprises a saturated fluorinated hydrocarbon represented by Formula (1): CxHyFz (In the formula, x represents 3, 4, or 5, y and z independently represent positive integers; and y > z). Provided is a plasma etching method with which, by utilizing a specific processing gas comprising a specific fluorinated hydrocarbon under plasma conditions to etch a silicon nitride film formed to cover a silicon oxide film formed on a processed body, selectivity of the silicon nitride film with respect to the silicon oxide film can be improved.
(FR)L'invention concerne un procédé de gravure par plasma qui utilise un gaz de traitement dans des conditions de plasma, le procédé étant tel que le gaz de traitement mentionné comprend un hydrocarbure fluoré saturé, représenté par la formule (1): CxHyFz (dans laquelle x représente 3, 4, ou 5, y et z représentent indépendamment deS nombres entiers positifs; et y > z). Ce procédé de gravure par plasma permet d'améliorer la sélectivité d'un film de nitrure de silicium par rapport à un film d'oxyde de silicium, grâce à l'utilisation d'un gaz de traitement spécifique comprenant un hydrocarbure fluoré spécifique dans des conditions de plasma pour graver un film de nitrure de silicium, formé de manière à couvrir un film d'oxyde de silicium formé sur un corps traité.
(JA) 本発明は、プラズマ条件下において処理ガスを用いるプラズマエッチング方法であって、前記処理ガスが、式(1):CxHyFz(式中、xは3、4または5を表し、y、zはそれぞれ独立して、正の整数を表し、かつ、y>zである。)で表される飽和フッ素化炭化水素を含むことを特徴とするプラズマエッチング方法である。本発明によれば、プラズマ条件下に特定のフッ素化炭化水素を含む処理ガスを用いることにより、被処理体に形成されたシリコン酸化膜を被うシリコン窒化膜をエッチングする際に、シリコン酸化膜に対するシリコン窒化膜の選択性を高めることができるプラズマエッチング方法が提供される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)