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1. (WO2009122992) MAGNETORESISTANCE STORAGE

Pub. No.:    WO/2009/122992    International Application No.:    PCT/JP2009/056053
Publication Date: Oct 8, 2009 International Filing Date: Mar 26, 2009
IPC: H01L 21/8246
G11C 11/15
H01L 27/105
H01L 43/08
Applicants: NEC CORPORATION
日本電気株式会社
KATOU, Yuukou
加藤 有光
Inventors: KATOU, Yuukou
加藤 有光
Title: MAGNETORESISTANCE STORAGE
Abstract:
A magnetoresistance storage includes magnetoresistance elements (1). Each magnetoresistance element (1) has a first magnetic layer (10), a second magnetic layer (20), and a third magnetic layer (30). The direction of the magnetization of the first magnetic layer (10) is fixed in a first direction. The second magnetic layer (20) is connected to the first magnetic layer (10) via a nonmagnetic layer (41) and has a first surface (S1) in contact with the nonmagnetic layer (41) and a second surface (S2) opposite to the first surface (S1). The third magnetic layer (30) is formed on the second surface (S2) and magnetically coupled to the second magnetic layer (20). The direction of the magnetization of the third magnetic layer (30) is fixed in a direction different from the first direction. The direction of the magnetization of the second magnetic layer (20) is a second direction neither parallel nor antiparallel to the first direction in the second surface (S2), and varies from the second direction to a direction parallel or antiparallel to the first direction with increasing distance from the second surface (S2) toward the first surface (S1).