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1. (WO2009121540) METHOD FOR PRODUCING A CONDUCTOR/NON-CONDUCTOR TRANSITION

Pub. No.:    WO/2009/121540    International Application No.:    PCT/EP2009/002299
Publication Date: Oct 8, 2009 International Filing Date: Mar 30, 2009
IPC: G11B 7/0045
G11B 7/242
Applicants: RHEINISCH-WESTFÄLISCH-TECHNISCHE HOCHSCHULE AACHEN
JUSTUS-LIEBIG-UNIVERSITÄT GIESSEN
TECHNISCHE UNIVERSITÄT CAROLO-WILHELMINA ZU BRAUNSCHWEIG
MARTIN, Manfred
DE SOUZA, Roger
SAMUELIS, Dominik
VALOV, Ilia
JANEK, Jürgen
BÖRGER, Alexander
BECKER, Klaus-Dieter
SCHMIDT, Peter
NAGARAJAN, Lakshmi
Inventors: MARTIN, Manfred
DE SOUZA, Roger
SAMUELIS, Dominik
VALOV, Ilia
JANEK, Jürgen
BÖRGER, Alexander
BECKER, Klaus-Dieter
SCHMIDT, Peter
NAGARAJAN, Lakshmi
Title: METHOD FOR PRODUCING A CONDUCTOR/NON-CONDUCTOR TRANSITION
Abstract:
The invention relates to a method for producing a conductor/non-conductor transition on a substrate (1), the substrate (1) comprising a non-conductive metal oxide layer (2), wherein the non-conductive metal oxide layer (2) is made of metastable amorphous non-stoichiometric metal oxide (2) and is locally heated, wherein the locally heated region crystallizes into a stable non-conductive stoichiometric metal oxide (4), around which the metal concentration in the amorphous non-stoichiometric metal oxide increases, in particular forms a conductive region (5). The invention further relates to a storage medium for storing digital information, comprising a particularly round rotatable substrate (1) and a layer (2) disposed thereon for receiving digital information, wherein the layer (2) is configured by a non-conductive amorphous non-stoichiometric metal oxide, which can be transferred by means of local heating, particularly using a focused laser beam (3a, 3b) or an electron beam or a current pulse, at the location of the local heating into a region (4) made of crystallized, non-conductive stoichiometric metal oxide, which is surrounded by an increased metal concentration, particularly amorphous conductive non-stoichiometric metal oxide (5). The invention also relates to a method for producing an amorphous non-conductive non-stoichiometric metal oxide layer on a substrate (1), wherein the non-stoichiometric metal oxide layer (2) is removed from a target of the same metal oxide present in a stoichiometric form, and deposited onto the substrate.