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Machine translation
1. (WO2009120487) MAGNETIC TUNNEL JUNCTION CELL INCLUDING MULTIPLE VERTICAL MAGNETIC DOMAINS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/120487    International Application No.:    PCT/US2009/036537
Publication Date: 01.10.2009 International Filing Date: 09.03.2009
IPC:
H01L 21/8247 (2006.01), H01L 27/22 (2006.01), G11C 11/56 (2006.01), H01L 43/08 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; ATTN: INTERNATIONAL IP ADMINISTRATION, 5775 Morehouse Drive, San Diego, California 92121 (US) (For All Designated States Except US).
LI, Xia [CN/US]; (US) (For US Only).
KANG, Seung H. [KR/US]; (US) (For US Only).
ZHU, Xiaochun [CN/US]; (US) (For US Only)
Inventors: LI, Xia; (US).
KANG, Seung H.; (US).
ZHU, Xiaochun; (US)
Agent: TALPALATSKY, Sam; 5775 Morehouse Drive, San Diego, California 92121 (US)
Priority Data:
12/054,536 25.03.2008 US
Title (EN) MAGNETIC TUNNEL JUNCTION CELL INCLUDING MULTIPLE VERTICAL MAGNETIC DOMAINS
(FR) CELLULE À JONCTION TUNNEL MAGNÉTIQUE COMPRENANT DE MULTIPLES DOMAINES MAGNÉTIQUES VERTICAUX
Abstract: front page image
(EN)A magnetic tunnel junction cell including multiple vertical domains is disclosed. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical side walls defines a unique vertical magnetic domain. Each of the unique vertical magnetic domains is adapted to store a digital value. In an embodiment, the MTJ cell comprises a fixed magnetic layer(102),a tunnel junction layer (104) and a free magnetic layer (106) between an electrode layer (110,112,114,116) and a centre electrode (108).
(FR)L'invention porte sur une cellule à jonction tunnel magnétique (MTJ) comprenant de multiples domaines verticaux. La cellule MTJ comprend de multiples parois latérales verticales. Chacune des multiples parois latérales verticales définit un domaine magnétique vertical unique. Chacun des domaines magnétiques verticaux uniques est conçu pour stocker une valeur numérique. Dans un mode de réalisation, la cellule MTJ comprend une couche magnétique fixe (102), une couche de jonction tunnel (104) et une couche magnétique libre (106) entre une couche d'électrode (110, 112, 114, 116) et une électrode centrale (108).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)